Thin film quantum materials

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Dependence of Curie temperature on Pt layer thickness in Co/Pt system

Applied Physics Letters AIP Publishing 106:13 (2015) 132409

Authors:

T Koyama, A Obinata, Y Hibino, A Hirohata, B Kuerbanjiang, VK Lazarov, D Chiba
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Magnetic reversal in Dy-doped DyFe2/YFe2 superlattice films

Physical Review B American Physical Society (APS) 91:9 (2015) 094403

Authors:

GBG Stenning, GJ Bowden, PAJ de Groot, G van der Laan, AI Figueroa, P Bencok, P Steadman, T Hesjedal
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Effect of interfacial structures on spin dependent tunneling in epitaxial L10-FePt/MgO/FePt perpendicular magnetic tunnel junctions

Journal of Applied Physics AIP Publishing 117:8 (2015) 083904

Authors:

G Yang, DL Li, SG Wang, Q L., SH Liang, HX Wei, XF Han, T Hesjedal, RCC Ward, A Kohn, A Elkayam, N Tal, X-G Zhang
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A New Topological Insulator Built From Quasi One-Dimensional Atomic Ribbons

Physica Status Solidi - Rapid Research Letters Wiley 9:2 (2015) 130-135

Authors:

Piet Scho nherr, Shilei Zhang, YQ Liu, P Kusch, S Reich, T Giles, D Daisenberger, D Prabhakaran, Y Chen, Thorsten Hesjedal

Abstract:

A novel topological insulator with orthorhombic crystal structure is demonstrated. It is characterized by quasi one-dimensional, conducting atomic chains instead of the layered, two-dimensional sheets known from the established Bi2(Se,Te)3 system. The Sb-doped Bi2Se3 nanowires are grown in a TiO2-catalyzed process by chemical vapor deposition. The binary Bi2Se3 is transformed from rhombohedral to orthorhombic by substituting Sb on ~38% of the Bi sites. Pure Sb2Se3 is a topologically trivial band insulator with an orthorhombic crystal structure at ambient conditions, and it is known to transform into a topological insulator at high pressure. Angle-resolved photoemission spectroscopy shows a topological surface state, while Sb doping also tunes the Fermi level to reside in the bandgap.
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A new topological insulator built from quasi one-dimensional atomic ribbons

Physica Status Solidi - Rapid Research Letters 9:2 (2015) 130-135

Authors:

P Schönherr, S Zhang, Y Liu, P Kusch, S Reich, T Giles, D Daisenberger, D Prabhakaran, Y Chen, T Hesjedal

Abstract:

A novel topological insulator with orthorhombic crystal structure is demonstrated. It is characterized by quasi one-dimensional, conducting atomic chains instead of the layered, two-dimensional sheets known from the established Bi2(Se,Te)3 system. The Sb-doped Bi2Se3 nanowires are grown in a TiO2-catalyzed process by chemical vapor deposition. The binary Bi2Se3 is transformed from rhombohedral to orthorhombic by substituting Sb on ∼38% of the Bi sites. Pure Sb2Se3 is a topologically trivial band insulator with an orthorhombic crystal structure at ambient conditions, and it is known to transform into a topological insulator at high pressure. Angle-resolved photoemission spectroscopy shows a topological surface state, while Sb doping also tunes the Fermi level to reside in the bandgap.
More details from the publisher