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A VUV sub-micron hotspot for photoemission spectroscopy

Vacuum ultraviolet (VUV) lasers have exhibited great potential as the light source for various spectroscopies, which, if they can be focused into a smaller beam spot, will not only allow investigation of mesoscopic materials but also find applications in manufacture of nano-objects with excellent precision. Towards this goal, scientists in China invented a 177 nm VUV laser system that can achieve a record-small (<1 μm) focal spot at a long focal length (~45 mm). This system can be re-equipped for usage in low-cost ARPES and might benefit quantum materials, condensed matter physics and nanophotonics.

Prof Yulin Chen

Professor of Physics

Research theme

  • Quantum materials

Sub department

  • Condensed Matter Physics

Research groups

  • Electronic structures and photoemission spectroscopy
yulin.chen@physics.ox.ac.uk
Clarendon Laboratory, room RM263, Mullard Bldg.
Recent publications
  • About
  • Publications

Evolution of electronic structure and electron-phonon coupling in ultrathin tetragonal CoSe films

Physical Review Materials American Physical Society (APS) 2:11 (2018) 114005

Authors:

L Shen, C Liu, FW Zheng, X Xu, YJ Chen, SC Sun, L Kang, ZK Liu, QK Xue, LL Wang, YL Chen, LX Yang
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Giant anomalous Hall effect in a ferromagnetic kagome-lattice semimetal

Nature Physics Springer Nature 14:11 (2018) 1125-1131

Authors:

Enke Liu, Yan Sun, Nitesh Kumar, Lukas Muechler, Aili Sun, Lin Jiao, Shuo-Ying Yang, Defa Liu, Aiji Liang, Qiunan Xu, Johannes Kroder, Vicky Süß, Horst Borrmann, Chandra Shekhar, Zhaosheng Wang, Chuanying Xi, Wenhong Wang, Walter Schnelle, Steffen Wirth, Yulin Chen, Sebastian TB Goennenwein, Claudia Felser
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Quantum oscillations of electrical resistivity in an insulator

Science American Association for the Advancement of Science (AAAS) 362:6410 (2018) 65-69

Authors:

Z Xiang, Y Kasahara, T Asaba, B Lawson, C Tinsman, Lu Chen, K Sugimoto, S Kawaguchi, Y Sato, G Li, S Yao, YL Chen, F Iga, John Singleton, Y Matsuda, Lu Li
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Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se

Science Advances American Association for the Advancement of Science 4:9 (2018) eaat8355

Authors:

Cheng Chen, M Wang, J Wu, H Fu, H Yang, Z Tian, T Tu, Han Peng, Y Sun, X Xu, J Jiang, Niels Schröter, Yiwei Li, Ding Pei, S Liu, Sandy Ekahana, H Yuan, J Xue, G Li, J Jia, Z Liu, B Yan, H Peng, Yulin Chen

Abstract:

Semiconductors are essential materials that affect our everyday life in the modern world. Two-dimensional semiconductors with high mobility and moderate bandgap are particularly attractive today because of their potential application in fast, low-power, and ultrasmall/thin electronic devices. We investigate the electronic structures of a new layered air-stable oxide semiconductor, Bi2O2Se, with ultrahigh mobility (~2.8 × 105 cm2/V⋅s at 2.0 K) and moderate bandgap (~0.8 eV). Combining angle-resolved photoemission spectroscopy and scanning tunneling microscopy, we mapped out the complete band structures of Bi2O2Se with key parameters (for example, effective mass, Fermi velocity, and bandgap). The unusual spatial uniformity of the bandgap without undesired in-gap states on the sample surface with up to ~50% defects makes Bi2O2Se an ideal semiconductor for future electronic applications. In addition, the structural compatibility between Bi2O2Se and interesting perovskite oxides (for example, cuprate high–transition temperature superconductors and commonly used substrate material SrTiO3) further makes heterostructures between Bi2O2Se and these oxides possible platforms for realizing novel physical phenomena, such as topological superconductivity, Josephson junction field-effect transistor, new superconducting optoelectronics, and novel lasers.

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Visualizing electronic structures of quantum materials by angle-resolved photoemission spectroscopy

Nature Reviews Materials Springer Nature 3:9 (2018) 341-353

Authors:

Haifeng Yang, Aiji Liang, Cheng Chen, Chaofan Zhang, Niels BM Schroeter, Yulin Chen
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