Enhanced π Conjugation around a Porphyrin[6] Nanoring
Angewandte Chemie Wiley 120:27 (2008) 5071-5074
Polarization anisotropy dynamics for thin films of a conjugated polymer aligned by nanoimprinting
Physical Review B - Condensed Matter and Materials Physics 77:11 (2008)
Abstract:
Time-integrated and femtosecond time-resolved photoluminescence spectroscopy has been used to study the dynamic emission polarization anisotropy for thin films of a conjugated polymer whose chains had been aligned through a nanoimprinting technique. The results indicate a high degree of chain alignment, with the presence of a small fraction of unaligned chain domains in film regions far from the imprinted surface. The time-averaged emission from aligned domains is found to be slightly shifted to higher photon energies compared to that from more disordered film regions. This effect is attributed to a subtly different chain packing geometry in the more aligned regions of the film, which leads to a reduced exciton diffusivity and inhibits energetic relaxation of the exciton in the inhomogeneously broadened density of states. While for an unaligned reference film, exciton migration results in a nearly complete depolarization of the emission over the first 300 ps, for the aligned films, interchain exciton hopping from unaligned to aligned domains is found to increase the anisotropy over the same time scale. In addition, excitons generated in aligned film domains were found to be slightly more susceptible to nonradiative quenching effects than those in disordered regions deeper inside the film, suggesting a marginally higher defect density near the nanoimprinted surface of the aligned film. © 2008 The American Physical Society.Exciton dissociation in polymer field-effect transistors studied using terahertz spectroscopy
Physical Review B - Condensed Matter and Materials Physics 77:12 (2008)
Abstract:
We have used terahertz time-domain spectroscopy to investigate photoinduced charge generation in conjugated polymer field-effect transistors. Our measurements show that excitons dissociate in the accumulation layer under the application of a gate voltage, with a quantum efficiency of ∼0.1 for an average gate field of ∼1× 108 V m-1. The transistor history is found to affect the exciton dissociation efficiency, which decreases as holes are increasingly trapped in the accumulation layer. The quantum efficiency of charge formation from excitons is compared with the two contrasting models proposed by Onsager and Arkhipov based on the assumption that field-induced exciton dissociation is assisted by the Brownian diffusive motion or an initial excess energy supplied by excited vibrational modes, respectively. © 2008 The American Physical Society.Enhanced pi conjugation around a porphyrin[6] nanoring.
Angew Chem Int Ed Engl 47:27 (2008) 4993-4996
Monte Carlo simulation of exciton bimolecular annihilation dynamics in supramolecular semiconductor architectures
Journal of Physical Chemistry C 111:51 (2007) 19111-19119