Data for "Room-temperature helimagnetism in FeGe thin films"
University of Oxford (2017)
Abstract:
FMR, muSR, SQUID and REXS dataAnalytical STEM Study of Dy-doped Bi2Te3 Thin Films
European Microscopy Congress 2016: Proceedings, (Ed.). Wiley-VCH Verlag GmbH & Co. KGaA (2016) 1050-1051
Topological insulators: Engineered heterostructures
Nature Materials Nature Publishing Group 16:1 (2016) 3-4
Abstract:
The combination of topological properties and magnetic order can lead to new quantum states and exotic physical phenomena. In particular, the coupling between topological insulators and antiferromagnets enables magnetic and electronic structural engineering.Experimental and density functional study of Mn doped Bi₂Te₃ topological insulator
APL Materials American Institute of Physics 4:12 (2016) 126103-1
Abstract:
We present a nanoscale structural and density functional study of the Mn doped 3D topological insulator Bi2Te3. X-ray absorption near edge structure show that Mn has valency of nominally 2+. Extended x-ray absorption fine structure spectroscopy in combination with electron energy loss spectroscopy (EELS) shows that Mn is a substitutional dopant of Bi and Te and also resides in the van der Waals gap between the quintuple layers of Bi2Te3. Combination of aberration-corrected scanningtransmission electron microscopy and EELS show that Mn substitution of Te occurs in film regions with increased Mn concentration. First-principles calculations show that the Mn dopants favor octahedral sites and are ferromagnetically coupled.Imaging and manipulation of skyrmion lattice domains in Cu2OSeO3
(2016)