Influence of surface passivation on ultrafast carrier dynamics and terahertz radiation generation in GaAs
Applied Physics Letters 89:23 (2006)
Abstract:
The carrier dynamics of photoexcited electrons in the vicinity of the surface of (N H4) 2 S -passivated GaAs were studied via terahertz emission spectroscopy and optical-pump terahertz-probe spectroscopy. Terahertz emission spectroscopy measurements, coupled with Monte Carlo simulations of terahertz emission, revealed that the surface electric field of GaAs reverses after passivation. The conductivity of photoexcited electrons was determined via optical-pump terahertz-probe spectroscopy and was found to double after passivation. These experiments demonstrate that passivation significantly reduces the surface state density and surface recombination velocity of GaAs. Finally, it was demonstrated that passivation leads to an enhancement in the power radiated by photoconductive switch terahertz emitters, thereby showing the important influence of surface chemistry on the performance of ultrafast terahertz photonic devices. © 2006 American Institute of Physics.Polarization sensitive terahertz time domain spectroscopy
Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 (2006)
Abstract:
We present a terahertz radiation detector that measures both transverse components of a terahertz single cycle's electric field, allowing the study of polarization dependent properties of materials. Measurements of birefringence in quartz are presented. © 2006 Optical Society of America.Terahertz emission and lifetime measurements of ion-implanted semiconductors: Experiment and simulation
Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 (2006)
Abstract:
The spectral width of terahertz emission from ion-implanted terahertz emitters increases with ion damage, owing to ultrafast carrier capture. Carrier dynamics simulations reinforce these findings. Optical-pump, terahertz-probe experiments confirm the subpicosecond lifetimes of these materials. © 2006 Optical Society of America.Influence of surface passivation on ultrafast carrier dynamics and terahertz radiation generation in GaAs
(2006)
Longitudinal electron bunch profile diagnostics at 45 MeV using coherent Smith-Purcell radiation
Physical Review Special Topics - Accelerators and Beams 9:9 (2006)