Terahertz probe of carrier trapping in polymer transistors
Optica Publishing Group (2007) tua2
Terahertz-frequency conductivity of charge stripes in the antiferromagnet La5/3Sr1/3NiO4
(2007) 852-853
Abstract:
We report the complex refractive index of La5/3Sr1/3NiO4 over the terahertz frequency range, obtained using time-domain spectroscopy. Negligible change in the complex refractive index with magnetic flux densities up to 6T was seen, while changes were observed as the lattice temperature was increased from 1.5 K to the charge-ordering temperature at 220 K. The terahertz frequency response therefore originates from the dielectric function rather than the magnetic permeability.Transmission and emission terahertz time-domain spectroscopy with polarisation-sensitive photoconductive receivers
(2007) 205-206
Abstract:
In this contribution a detailed characterisation of the performance of three-contact polarisation-sensitive terahertz detectors will be discussed. Furthermore the appropriate mathematical formalism required for the analysis of polarisation-resolved THz measurements will be presented. In addition, measurements of the polarisation-resolved transmission of quartz and polarisation-resolved emission of (110) ZnTe will be shown in order to illustrate the relevance of polarisation in time domain measurements. Finally perspectives on experiments that require polarisation sensitivity will be discussed.Influence of surface passivation on ultrafast carrier dynamics and terahertz radiation generation in GaAs
Applied Physics Letters 89:23 (2006)
Abstract:
The carrier dynamics of photoexcited electrons in the vicinity of the surface of (N H4) 2 S -passivated GaAs were studied via terahertz emission spectroscopy and optical-pump terahertz-probe spectroscopy. Terahertz emission spectroscopy measurements, coupled with Monte Carlo simulations of terahertz emission, revealed that the surface electric field of GaAs reverses after passivation. The conductivity of photoexcited electrons was determined via optical-pump terahertz-probe spectroscopy and was found to double after passivation. These experiments demonstrate that passivation significantly reduces the surface state density and surface recombination velocity of GaAs. Finally, it was demonstrated that passivation leads to an enhancement in the power radiated by photoconductive switch terahertz emitters, thereby showing the important influence of surface chemistry on the performance of ultrafast terahertz photonic devices. © 2006 American Institute of Physics.Polarization sensitive terahertz time domain spectroscopy
Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 (2006)