Prof Michael Johnston: Publications

Polarisation-Sensitive THz Detectors

(2006)

Authors:

MB Johnston, E Castro-Camus, J Lloyd-Hughes, MD Fraser, HH Tan, C Jagadish

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Simulation and optimization of arsenic-implanted THz emitters

(2006)

Authors:

MB Johnston, J Lloyd-Hughes, E Castro-Camus, MD Fraser, C Jagadish

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Photoconductive detection of arbitrary polarised terahertz pulses

(2006)

Authors:

E Castro-Camus, J Lloyd-Hughes, MB Johnston, MD Fraser, HH Tan, C Jagadish

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Terahertz emission and lifetime measurements of ionimplanted semiconductors: Experiment and simulation

Optics InfoBase Conference Papers (2006)

Authors:

J Lloyd-Hughes, E Castro-Camus, MD Fraser, HH Tan, C Jagadish, MB Johnston

Abstract:

The spectral width of terahertz emission from ion-implanted terahertz emitters increases with ion damage, owing to ultrafast carrier capture. Carrier dynamics simulations reinforce these findings. Optical-pump, terahertz-probe experiments confirm the subpicosecond lifetimes of these materials. © 2006 Optical Society of America.

Broadband terahertz emission from ion-implanted semiconductors

SPRINGER PROC PHYS 110 (2006) 77-80

Authors:

J Lloyd-Hughes, E Castro-Camus, MD Fraser, HH Tang, C Ja-gadish, MB Johnston

Abstract:

The terahertz radiation emitted from Fe+ ion-implanted InGaAs surface emitters and InP photoconductive switches was measured. We experimentally observe an increase in the spectral width of terahertz radiation at greater ion damage, which we attribute to the ultrafast capture of photoexcited carriers. Results from a three-dimensional carrier dynamics simulation support this explanation.

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Prof Michael Johnston

Research theme

Sub department

Polarisation-Sensitive THz Detectors

Authors:

Simulation and optimization of arsenic-implanted THz emitters

Authors:

Photoconductive detection of arbitrary polarised terahertz pulses

Authors:

Terahertz emission and lifetime measurements of ionimplanted semiconductors: Experiment and simulation

Authors:

Abstract:

Broadband terahertz emission from ion-implanted semiconductors

Authors:

Abstract:

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Prof Michael Johnston

Research theme

Sub department

Research groups

Polarisation-Sensitive THz Detectors

Authors:

Simulation and optimization of arsenic-implanted THz emitters

Authors:

Photoconductive detection of arbitrary polarised terahertz pulses

Authors:

Terahertz emission and lifetime measurements of ionimplanted semiconductors: Experiment and simulation

Authors:

Abstract:

Broadband terahertz emission from ion-implanted semiconductors

Authors:

Abstract: