Carrier dynamics in ion-implanted semiconductors studied by simulation and observation of terahertz emission
Proceedings of SPIE - The International Society for Optical Engineering 6118 (2006)
Abstract:
We have experimentally measured the terahertz radiation from a series of ion-implanted semiconductors, both from the bare semiconductor surface and from photoconductive switches fabricated on them. GaAs was implanted with As + ions, and InGaAs and InP with Fe+ ions, and all samples were annealed post implantation. An increase in emission power is observed at high frequencies, which we attribute to the ultrafast trapping of carriers. We use a three-dimensional carrier dynamics simulation to model the emission process. The simulation accurately predicts the experimentally observed bandwidth increase, without resorting to any fitting parameters. Additionally, we discuss intervalley scattering, the influence of space-charge fields, and the relative performance of InP, GaAs and In As based photoconductive emitters.Detecting the full polarisation state of terahertz transients
(2006)
Simulation and optimization of arsenic-implanted THz emitters
(2006)
Photoconductive detection of arbitrary polarised terahertz pulses
(2006)