Prof Henry Snaith FRS

Abstract:

Demand for energy in the context of climate change is driving rapid deployment of low-cost renewable energy and is accelerating efforts to deliver advanced photovoltaic (PV) technologies. In the past decade, the steeply rising solar-to-electrical power conversion efficiency of metal-halide perovskite solar cells (PSCs) make them a compelling candidate for next-generation PVs, with interesting applications envisaged beyond traditional solar plants. These include building integrated PVs, flexible solar-powered electronics, and solar vehicles and aircraft. Metal-halide perovskites benefit from the low formation energy for crystallization, a consequence of their ionic nature, which enables close to ambient-temperature solution or vapor-phase deposition and a thin-film crystallization process. However, the ease by which rapid crystallization occurs also introduces defects and local heterogeneities throughout the perovskite films and at internal interfaces, which limits their efficiency (1).

Abstract:

The efficiency and longevity of metal-halide perovskite solar cells are typically dictated by nonradiative defect-mediated charge recombination. In this work, we demonstrate a vapor-based amino-silane passivation that reduces photovoltage deficits to around 100 millivolts (>90% of the thermodynamic limit) in perovskite solar cells of bandgaps between 1.6 and 1.8 electron volts, which is crucial for tandem applications. A primary-, secondary-, or tertiary-amino–silane alone negatively or barely affected perovskite crystallinity and charge transport, but amino-silanes that incorporate primary and secondary amines yield up to a 60-fold increase in photoluminescence quantum yield and preserve long-range conduction. Amino-silane–treated devices retained 95% power conversion efficiency for more than 1500 hours under full-spectrum sunlight at 85°C and open-circuit conditions in ambient air with a relative humidity of 50 to 60%.

Abstract:

Metal halide perovskites are promising light absorbers for multijunction photovoltaic applications because of their remarkable bandgap tunability, achieved through compositional mixing on the halide site. However, poor energy-level alignment at the interface between wide-bandgap mixed-halide perovskites and charge-extraction layers still causes significant losses in solar-cell performance. Here, the origin of such losses is investigated, focusing on the energy-level misalignment between the valence band maximum and the highest occupied molecular orbital (HOMO) for a commonly employed combination, FA_0.83Cs_0.17Pb(I_1-xBr_x)₃ with bromide content x ranging from 0 to 1, and poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA). A combination of time-resolved photoluminescence spectroscopy and numerical modeling of charge-carrier dynamics reveals that open-circuit voltage (V_OC) losses associated with a rising energy-level misalignment derive from increasing accumulation of holes in the HOMO of PTAA, which then subsequently recombine non-radiatively across the interface via interfacial defects. Simulations assuming an ideal choice of hole-transport material to pair with FA_0.83Cs_0.17Pb(I_1-xBr_x)₃ show that such V_OC losses originating from energy-level misalignment can be reduced by up to 70 mV. These findings highlight the urgent need for tailored charge-extraction materials exhibiting improved energy-level alignment with wide-bandgap mixed-halide perovskites to enable solar cells with improved power conversion efficiencies.