Ruddlesden-Popper defects act as a free surface: role in formation and photophysical properties of CsPbI3

(2025)

Authors:

Weilun Li, Qimu Yuan, Yinan Chen, Joshua RS Lilly, Marina R Filip, Laura M Herz, Michael B Johnston, Joanne Etheridge

Theory of ab initio downfolding with arbitrary range electron-phonon coupling

(2025)

Authors:

Norm M Tubman, Christopher JN Coveney, Chih-En Hsu, Andres Montoya-Castillo, Marina R Filip, Jeffrey B Neaton, Zhenglu Li, Vojtech Vlcek, Antonios M Alvertis

Phonon-mediated electron attraction in SrTiO$_3$ via the generalized Fröhlich and deformation potential mechanisms

(2025)

Authors:

Norm M Tubman, Christopher JN Coveney, Chih-En Hsu, Andres Montoya-Castillo, Marina R Filip, Jeffrey B Neaton, Zhenglu Li, Vojtech Vlcek, Antonios M Alvertis

Phonon screening of excitons in atomically thin semiconductors

Physical Review Letters American Physical Society 133:20 (2024) 206901

Authors:

Woncheol Lee, Antonios M Alvertis, Zhenglu Li, Steven G Louie, Marina R Filip, Jeffrey B Neaton, Emmanouil Kioupakis

Abstract:

Atomically thin semiconductors, encompassing both 2D materials and quantum wells, exhibit a pronounced enhancement of excitonic effects due to geometric confinement. Consequently, these materials have become foundational platforms for the exploration and utilization of excitons. Recent ab initio studies have demonstrated that phonons can substantially screen electron-hole interactions in bulk semiconductors and strongly modify the properties of excitons. While excitonic properties of atomically thin semiconductors have been the subject of extensive theoretical investigations, the role of phonon screening on excitons in atomically thin structures remains unexplored. In this Letter, we demonstrate via ab initio GW-Bethe-Salpeter equation calculations that phonon screening can have a significant impact on optical excitations in atomically thin semiconductors. We further show that the degree of phonon screening can be tuned by structural engineering. We focus on atomically thin GaN quantum wells embedded in AlN and identify specific phonons in the surrounding material, AlN, that dramatically alter the lowest-lying exciton in monolayer GaN via screening. Our studies provide new intuition beyond standard models into the interplay among structural properties, phonon characteristics, and exciton properties in atomically thin semiconductors, and have implications for future experiments.

Origin of competing charge density waves in kagome metal ScV6Sn6.

Nature communications 15:1 (2024) 10428

Authors:

Kang Wang, Siyu Chen, Sun-Woo Kim, Bartomeu Monserrat

Abstract:

Understanding competing charge density wave (CDW) orders in the bilayer kagome metal ScV6Sn6 remains challenging. Experimentally, upon cooling, short-range order with wave vector q 2 = ( 1 3 , 1 3 , 1 2 ) forms, which is subsequently suppressed by the condensation of long-range q 3 = ( 1 3 , 1 3 , 1 3 ) CDW order at lower temperature. Theoretically, however, the q2 CDW is predicted as the ground state, leaving the CDW mechanism elusive. Here, using anharmonic phonon-phonon calculations combined with density functional theory, we predict a temperature-driven structural phase transitions from the high-temperature pristine phase to the q2 CDW, followed by the low-temperature q3 CDW, explaining experimental observations. We demonstrate that semi-core electron states stabilize the q3 CDW over the q2 CDW. Furthermore, we find that the out-of-plane lattice parameter controls the competing CDWs, motivating us to propose compressive bi-axial strain as an experimental protocol to stabilize the q2 CDW. Finally, we suggest Ge or Pb doping at the Sn site as another potential avenue to control CDW instabilities. Our work provides a full theory of CDWs in ScV6Sn6, rationalizing experimental observations and resolving earlier discrepancies between theory and experiment.