Giant Domain Wall Anomalous Hall Effect in a Layered Antiferromagnet EuAl_{2}Si_{2}.
Physical review letters 133:21 (2024) 216602
Abstract:
Generally, the dissipationless Hall effect in solids requires time-reversal symmetry breaking (TRSB), where TRSB induced by external magnetic field results in the ordinary Hall effect, while TRSB caused by spontaneous magnetization gives rise to the anomalous Hall effect (AHE) which scales with the net magnetization. The AHE is therefore not expected in antiferromagnets with vanishing small magnetization. However, large AHE was recently observed in certain antiferromagnets with noncollinear spin structure and nonvanishing Berry curvature. Here, we report another origin of AHE in a layered antiferromagnet EuAl_{2}Si_{2}, namely, the domain wall (DW) skew scattering with Weyl points near the Fermi level, in experiments for the first time. Interestingly, the DWs form a unique periodic stripe structure with controllable periodicity by external magnetic field, which decreases nearly monotonically from 975 nm at 0 T to 232 nm at 4 T. Electrons incident on DW with topological bound states experience strong asymmetric scattering, leading to a giant AHE, with the DW Hall conductivity (DWHC) at 2 K and 1.2 T reaching a record value of ∼1.51×10^{4} Scm^{-1} among bulk systems and being 2 orders of magnitude larger than the intrinsic anomalous Hall conductivity. The observation not only sets a new paradigm for exploration of large anomalous Hall effect, but also provides potential applications in spintronic devices.Constructing the Fulde–Ferrell–Larkin–Ovchinnikov state in a CrOCl/NbSe2 van der Waals heterostructure
Nano Letters American Chemical Society 24:41 (2024) 12814-12822
Abstract:
Time reversal symmetry breaking in superconductors, resulting from external magnetic fields or spontaneous magnetization, often leads to unconventional superconducting properties. In this way, an intrinsic phenomenon called the Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state may be realized by the Zeeman effect. Here, we construct the FFLO state in an artificial CrOCl/NbSe<sub>2</sub> van der Waals (vdW) heterostructure by utilizing the superconducting proximity effect of NbSe<sub>2</sub> flakes. The proximity-induced superconductivity demonstrates a considerably weak gap of about 0.12 meV, and the in-plane upper critical field reveals the behavior of the FFLO state. First-principles calculations uncover the origin of the proximitized superconductivity, which indicates the importance of Cr vacancies or line defects in CrOCl. Moreover, the FFLO state could be induced by the inherent large spin splitting in CrOCl. Our findings not only provide a practical scheme for constructing the FFLO state but also inspire the discovery of an exotic FFLO state in other two-dimensional vdW heterostructures.Self-organized topological insulator heterostructures via eutectic solidification of Bi2 Te3 -Te
Next Materials 5 (2024)
Abstract:
Topological insulators (TI) are generating increasing interest as a new state of matter and due to the potential use of topologically- protected gapless surface states in spintronic devices and quantum computing. However, challenges such as high sensitivity to the atmosphere, the low surface-to-volume ratio, and the need for various material junctions currently limit their application. Here, a novel, natural and simple approach to the fabrication of volumetric TI heterostructures that can overcome these core challenges is presented, using the example of a Bi2Te3-Te eutectic composite. The proposed method based on directional solidification of eutectic composites, enables the formation of ensembles of parallel TI-other material heterojunctions through a self-organization process. It also offers control over the heterostructures’ dimensions/refinement. Electron microscopy techniques show that the heterostructure exhibits a lamellar/layered microstructure with atomically smooth Bi2Te3ǀǀTe interfaces. Angle-resolved photoelectron spectroscopy experiments confirm the existence of metallic surface states, while Kelvin probe force microscopy depicts the formed p-n junctions. The new degrees of freedom offered here, such as control of heterojunction chemical composition, packing density, and available fabrication techniques, may facilitate large-scale customized printing of topological devices.Quantum-confined tunable ferromagnetism on the surface of a Van der Waals antiferromagnet NaCrTe2
Nano Letters American Chemical Society 24:32 (2024) 9832-9838
Abstract:
The surface of three-dimensional materials provides an ideal and versatile platform to explore quantum-confined physics. Here, we systematically investigate the electronic structure of Na-intercalated CrTe2, a van der Waals antiferromagnet, using angle-resolved photoemission spectroscopy and ab initio calculations. The measured band structure deviates from the calculation of bulk NaCrTe2 but agrees with that of ferromagnetic monolayer CrTe2. Consistently, we observe unexpected exchange splitting of the band dispersions, persisting well above the Néel temperature of bulk NaCrTe2. We argue that NaCrTe2 features a quantum-confined 2D ferromagnetic state in the topmost surface layer due to strong ferromagnetic correlation in the CrTe2 layer. Moreover, the exchange splitting and the critical temperature can be controlled by surface doping of alkali-metal atoms, suggesting the feasibility of tuning the surface ferromagnetism. Our work not only presents a simple platform for exploring tunable 2D ferromagnetism but also provides important insights into the quantum-confined low-dimensional magnetic states.Electronic correlation and pseudogap-like behavior of high-temperature superconductor La3Ni2O7
Chinese Physics Letters IOP Publishing 41:8 (2024) 087402