Pressure-tunable large anomalous hall effect in ferromagnetic metal LiMn6Sn6

Chinese Physics Letters IOP Publishing 41:5 (2024) 057302

Authors:

Lingling Gao, Junwen Lai, Dong Chen, Cuiying Pei, Qi Wang, Yi Zhao, Changhua Li, Weizheng Cao, Juefei Wu, Yulin Chen, Xingqiu Chen, Yan Sun, Claudia Felser, Yanpeng Qi

Abstract:

Recently, giant intrinsic anomalous Hall effect (AHE) has been observed in the materials with kagome lattice. Here, we systematically investigate the influence of high pressure on the AHE in the ferromagnet LiMn6Sn6 with clean Mn kagome lattice. Our in situ high-pressure Raman spectroscopy indicates that the crystal structure of LiMn6Sn6 maintains a hexagonal phase under high pressures up to 8.51 GPa. The anomalous Hall conductivity (AHC) σ x y A remains around 150 Ω−1⋅cm−1, dominated by the intrinsic mechanism. Combined with theoretical calculations, our results indicate that the stable AHE under pressure in LiMn6Sn6 originates from the robust electronic and magnetic structure.

Disorder-broadened phase boundary with enhancedamorphous superconductivity in pressurized In2Te5

Advanced Materials Wiley 36:27 (2024) 2401118

Authors:

Yi Zhao, Tianping Ying, Lingxiao Zhao, Yulin Chen

Abstract:

As an empirical tool in materials science and engineering, the iconic phase diagram owes its robustness and practicality to the topological characteristics rooted in the celebrated Gibbs phase law free variables (F) = components (C) – phases (P) + 2. When crossing the phase diagram boundary, the structure transition occurs abruptly, bringing about an instantaneous change in physical properties and limited controllability on the boundaries (F = 1). Here, the sharp phase boundary is expanded to an amorphous transition region (F = 2) by partially disrupting the long-range translational symmetry, leading to a sequential crystalline–amorphous–crystalline (CAC) transition in a pressurized In2Te5 single crystal. Through detailed in situ synchrotron diffraction, it is elucidated that the phase transition stems from the rotation of immobile blocks [In2Te2]2+, linked by hinge-like [Te3]2− trimers. Remarkably, within the amorphous region, the amorphous phase demonstrates a notable 25% increase of the superconducting transition temperature (Tc), while the carrier concentration remains relatively constant. Furthermore, a theoretical framework is proposed revealing that the unconventional boost in amorphous superconductivity might be attributed to an intensified electron correlation, triggered by a disorder-augmented multifractal behavior. These findings underscore the potential of disorder and prompt further exploration of unforeseen phenomena on the phase boundaries.

Proximity-effect-induced superconductivity in a van der Waals heterostructure consisting of a magnetic topological insulator and a conventional superconductor

Physical Review B American Physical Society 109:14 (2024) L140503

Authors:

Peng Dong, Xiaofei Hou, Jiadian He, Yiwen Zhang, Yifan Ding, Xiaohui Zeng, Jinghui Wang, Yueshen Wu, Kenji Watanabe, Takashi Taniguchi, Wei Xia, Yanfeng Guo, Yulin Chen, Xiang Zhou, Wei Li, Jun Li

Abstract:

Nontrivial topological superconductivity has received enormous attention due to its potential applications in topological quantum computing. The intrinsic issue concerning the correlation between a topological insulator and a superconductor is, however, still widely open. Here, we systemically report an emergent superconductivity in a cross junction composed of a magnetic topological insulator MnBi2⁢Te4 and a conventional superconductor NbSe2. Remarkably, the interface indicates the existence of a reduced superconductivity at the surface of NbSe2 and a proximity-effect-induced superconductivity at the surface of MnBi2⁢Te4. Furthermore, the in-plane angular-dependent magnetoresistance measurements unveil distinctive features indicative of unconventional pairing symmetry in these superconducting gaps. Our findings extend our views and ideas of topological superconductivity in the superconducting heterostructures with time-reversal symmetry breaking, offering an exciting opportunity to elucidate the cooperative effects on the surface state of a topological insulator aligning a superconductor.

Proximity-effect-induced superconductivity in a van der Waals heterostructure consisting of a magnetic topological insulator and a conventional superconductor

Physical Review B American Physical Society (APS) 109:14 (2024) l140503

Authors:

Peng Dong, Xiaofei Hou, Jiadian He, Yiwen Zhang, Yifan Ding, Xiaohui Zeng, Jinghui Wang, Yueshen Wu, Kenji Watanabe, Takashi Taniguchi, Wei Xia, Yanfeng Guo, Yulin Chen, Xiang Zhou, Wei Li, Jun Li

Conversion of chirality to twisting via sequential one-dimensional and two-dimensional growth of graphene spirals.

Nature materials 23:3 (2024) 331-338

Authors:

Zhu-Jun Wang, Xiao Kong, Yuan Huang, Jun Li, Lihong Bao, Kecheng Cao, Yuxiong Hu, Jun Cai, Lifen Wang, Hui Chen, Yueshen Wu, Yiwen Zhang, Fei Pang, Zhihai Cheng, Petr Babor, Miroslav Kolibal, Zhongkai Liu, Yulin Chen, Qiang Zhang, Yi Cui, Kaihui Liu, Haitao Yang, Xinhe Bao, Hong-Jun Gao, Zhi Liu, Wei Ji, Feng Ding, Marc-Georg Willinger

Abstract:

The properties of two-dimensional (2D) van der Waals materials can be tuned through nanostructuring or controlled layer stacking, where interlayer hybridization induces exotic electronic states and transport phenomena. Here we describe a viable approach and underlying mechanism for the assisted self-assembly of twisted layer graphene. The process, which can be implemented in standard chemical vapour deposition growth, is best described by analogy to origami and kirigami with paper. It involves the controlled induction of wrinkle formation in single-layer graphene with subsequent wrinkle folding, tearing and re-growth. Inherent to the process is the formation of intertwined graphene spirals and conversion of the chiral angle of 1D wrinkles into a 2D twist angle of a 3D superlattice. The approach can be extended to other foldable 2D materials and facilitates the production of miniaturized electronic components, including capacitors, resistors, inductors and superconductors.