A stable three-dimensional topological Dirac semimetal Cd3As2
Nature Materials Springer Nature 13:7 (2014) 677-681
Discovery of a three-dimensional topological Dirac semimetal, Na3Bi.
Science 343:6173 (2014) 864-867
Abstract:
Three-dimensional (3D) topological Dirac semimetals (TDSs) represent an unusual state of quantum matter that can be viewed as "3D graphene." In contrast to 2D Dirac fermions in graphene or on the surface of 3D topological insulators, TDSs possess 3D Dirac fermions in the bulk. By investigating the electronic structure of Na3Bi with angle-resolved photoemission spectroscopy, we detected 3D Dirac fermions with linear dispersions along all momentum directions. Furthermore, we demonstrated the robustness of 3D Dirac fermions in Na3Bi against in situ surface doping. Our results establish Na3Bi as a model system for 3D TDSs, which can serve as an ideal platform for the systematic study of quantum phase transitions between rich topological quantum states.Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2.
Nat Nanotechnol 9:2 (2014) 111-115
Abstract:
Quantum systems in confined geometries are host to novel physical phenomena. Examples include quantum Hall systems in semiconductors and Dirac electrons in graphene. Interest in such systems has also been intensified by the recent discovery of a large enhancement in photoluminescence quantum efficiency and a potential route to valleytronics in atomically thin layers of transition metal dichalcogenides, MX2 (M = Mo, W; X = S, Se, Te), which are closely related to the indirect-to-direct bandgap transition in monolayers. Here, we report the first direct observation of the transition from indirect to direct bandgap in monolayer samples by using angle-resolved photoemission spectroscopy on high-quality thin films of MoSe2 with variable thickness, grown by molecular beam epitaxy. The band structure measured experimentally indicates a stronger tendency of monolayer MoSe2 towards a direct bandgap, as well as a larger gap size, than theoretically predicted. Moreover, our finding of a significant spin-splitting of ∼ 180 meV at the valence band maximum of a monolayer MoSe2 film could expand its possible application to spintronic devices.Study of Gd-doped Bi2Te3 thin films: Molecular beam epitaxy growth and magnetic properties
Journal of Applied Physics AIP Publishing 115:2 (2014) 023904
A stable three-dimensional topological Dirac semimetal Cd3 As2
Nature Materials 13:7 (2014) 677-681