Electronic structures and photoemission spectroscopy

Research group

Research theme

Sub department

About

Anomalous Fermi-Surface Dependent Pairing in a Self-Doped High-$T_c$ Superconductor

Phys. Rev. Lett. American Physical Society 97 (2006) 236401-236401

Authors:

Yulin Chen, Akira Iyo, Wanli Yang, Xingjiang Zhou, Donghui Lu, Hiroshi Eisaki, Thomas P Devereaux, Zahid Hussain, Z-X Shen
More details from the publisher
More details
More details

Deep Level of ZnO/p-Si Heterostructure and Its Influence on the Photoluminescence

Chn. J. Lumin. Chinese Academy of Science 2001:3 (2001) 218

Authors:

Liu C. H., Zhu J. J., Lin B. X., Chen Y. L., Peng C., Yang Z., Fu Z. X
More details

Electrical Properties of the ZnO/Si Heterostructure

Chinese Physics Letters 18:8 (2001) 1108

Abstract:

The electrical properties of a type of semiconductor heterostructure fabricated by depositing zinc oxide film on a silicon substrate are investigated. The I - V , I - T curves, and deep level transient spectra are measured. From these results, we acquire the information of the characteristics of the junction, and compute some energy levels of the samples.
More details
More details
More details from the publisher

The interface properties of MIS structures on anodically oxidized GaSb

Semiconductor Science and Technology IOP Publishing 12:9 (1997) 1140

Authors:

GLB Houston, Y Chen, J Singleton, NJ Mason, PJ Walker
More details from the publisher

Improved photoluminescence from electrochemically passivated GaSb

Semiconductor Science and Technology IOP Publishing 12:4 (1997) 413

Authors:

A Salesse, R Alabedra, Y Chen, M Lakrimi, RJ Nicholas, NJ Mason, PJ Walker
More details from the publisher
More details