Oxide electronics

Abstract:

Using micromagnetic simulations, we have modelled the formation of imprinted merons and anti-merons in cobalt overlayers of different thickness (1-8 nm), stabilised by interfacial exchange with antiferromagnetic vortices in $\alpha$-Fe2O3. Structures similar to those observed experimentally could be obtained with reasonable exchange parameters, also in the presence of surface roughness. We produce simulated meron/antimeron images by magnetic force microscopy (MFM) and nitrogen-vacancy (N-V) centre microscopy, and established signatures of these topological structures in different experimental configurations.

Abstract:

We explore the magneto-optical Kerr effect (MOKE) for different spin configurations of the (CrI3)2 bilayer and (CrBr3/CrI3) mixed bilayer using symmetry arguments and first-principles electronic structure calculations. Starting from CrX3 (X = I, Br) monolayers, we considered collinear ferromagnetic (FM) and layered antiferromagnetic (AFM) states for (CrI3)2 and (CrBr3/CrI3) bilayers. The AFM (CrI3)2 bilayer does not show MOKE, consistent with the presence of a symmetry operator combining inversion (I) and time reversal (T) symmetries. The FM state preserves I symmetry but breaks the T symmetry, thus allowing a nonzero Kerr angle, which is reversible by switching the FM spins. The (CrBr3/CrI3) bilayer breaks both the I and T symmetries and thus exhibits MOKE both in the FM state and, remarkably, in the AFM state. In both FM and AFM configurations, the Kerr angle switches by reversing the spins in both layers. Our study demonstrates that the MOKE spectra can help to characterize different magnetic configurations in these emerging two-dimensional (2D) magnetic materials due to a different stacking of the monolayers, even in the AFM case. Note that the present symmetry analyses and MOKE properties apply to more general 2D magnetic van der Waals heterostructures. Furthermore, we propose the (CrBr3/CrI3) bilayer as a promising candidate for AFM spintronics since the two time-reversed AFM states are associated with opposite Kerr rotation, i.e., they could be used as memory elements.

Abstract:

Reduced graphene oxide (rGO) has attracted significant interest in an array of applications ranging from flexible optoelectronics, energy storage, sensing, and very recently as membranes for water purification. Many of these applications require a reproducible, scalable process for the growth of large-area films of high optical and electronic quality. In this work, we report a one-step scalable method for the growth of reduced-graphene-oxide-like (rGO-like) thin films via pulsed laser deposition (PLD) of sp² carbon in an oxidizing environment. By deploying an appropriate laser beam scanning technique, we are able to deposit wafer-scale uniform rGO-like thin films with ultrasmooth surfaces (roughness <1 nm). Further, in situ control of the growth environment during the PLD process allows us to tailor its hybrid sp²-sp³ electronic structure. This enables us to control its intrinsic optoelectronic properties and helps us achieve some of the lowest extinction coefficients and refractive index values (0.358 and 1.715, respectively, at 2.236 eV) as compared to chemically grown rGO films. Additionally, the transparency and conductivity metrics of our PLD grown thin films are superior to other p-type rGO films and conducting oxides. Unlike chemical methods, our growth technique is devoid of catalysts and is carried out at lower process temperatures. This would enable the integration of these thin films with a wide range of material heterostructures via direct growth.