Semiconductors group

Abstract:

<p>This dataset accompanies the publication "Quantum-mechanical effects in photoluminescence from thin crystalline gold films" published in Light: Science & Applications (https://doi.org/10.1038/s41377-024-01408-2). The data can be used to reproduce plots 1-4 in the main text and all plots with data in the supporting information. This data was generated through a combination of raman spectroscopy, microscale absorption meaurements and density functional theory modelling. All files are in excel spreadsheets and easily readable, except compressed files which have a readme file in the appropriate section.</p> <p>The abstract for the associated paper is as follows:</p> <p>Luminescence constitutes a unique source of insight into hot carrier processes in metals, including those in plasmonic nanostructures used for sensing and energy applications. However, being weak in nature, metal luminescence remains poorly understood, its microscopic origin strongly debated, and its potential for unravelling nanoscale carrier dynamics largely unexploited. Here, we reveal quantum-mechanical effects emanating in the luminescence from thin monocrystalline gold flakes. Specifically, we present experimental evidence, supported by first-principles simulations, to demonstrate its photoluminescence origin (i.e., radiative emission from electron/hole recombination) when exciting in the interband regime. Our model allows us to identify changes to the measured gold luminescence due to quantum-mechanical effects as the gold film thickness is reduced. Excitingly, such effects are observable in the luminescence signal from flakes up to 40 nm in thickness, associated with the out-of-plane discreteness of the electronic band structure near the Fermi level. We qualitatively reproduce the observations with first-principles modelling, thus establishing a unified description of luminescence in gold monocrystalline flakes and enabling its widespread application as a probe of carrier dynamics and light-matter interactions in this material. Our study paves the way for future explorations of hot carriers and charge-transfer dynamics in a multitude of material systems. </p&gt

Abstract:

Metal halide perovskites are promising light absorbers for multijunction photovoltaic applications because of their remarkable bandgap tunability, achieved through compositional mixing on the halide site. However, poor energy-level alignment at the interface between wide-bandgap mixed-halide perovskites and charge-extraction layers still causes significant losses in solar-cell performance. Here, the origin of such losses is investigated, focusing on the energy-level misalignment between the valence band maximum and the highest occupied molecular orbital (HOMO) for a commonly employed combination, FA_0.83Cs_0.17Pb(I_1-xBr_x)₃ with bromide content x ranging from 0 to 1, and poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA). A combination of time-resolved photoluminescence spectroscopy and numerical modeling of charge-carrier dynamics reveals that open-circuit voltage (V_OC) losses associated with a rising energy-level misalignment derive from increasing accumulation of holes in the HOMO of PTAA, which then subsequently recombine non-radiatively across the interface via interfacial defects. Simulations assuming an ideal choice of hole-transport material to pair with FA_0.83Cs_0.17Pb(I_1-xBr_x)₃ show that such V_OC losses originating from energy-level misalignment can be reduced by up to 70 mV. These findings highlight the urgent need for tailored charge-extraction materials exhibiting improved energy-level alignment with wide-bandgap mixed-halide perovskites to enable solar cells with improved power conversion efficiencies.

Abstract:

With high efficacy for electron-photon conversion under low light, perovskite materials show great potential for indoor solar cell applications to power small electronics for internet of things (IoTs). To match the spectrum of an indoor LED light source, triple cation perovskite composition was varied to adjust band gap values via Cs and Br tuning. However, increased band gaps lead to morphology, phase instability, and defect issues. 10% Cs and 30% Br strike the right balance, leading to low-cost carbon-based devices with the highest power conversion efficiency (PCE) of 31.94% and good stability under low light cycles. With further improvement in device stack and size, functional solar cells with the ultralow hysteresis index (HI) of 0.1 and the highest PCE of 30.09% with an active area of 1 cm² can be achieved. A module from connecting two such cells in series can simultaneously power humidity and temperature sensors under 1000 lux.