Strong absorption and ultrafast localisation in NaBiS2 nanocrystals with slow charge-carrier recombination

Nature Communications Springer Nature 13 (2022) 4960

Authors:

Yi-Teng Huang, Seán R Kavanagh, Marcello Righetto, Marin Rusu, Igal Levine, Thomas Unold, Szymon J Zelewski, Alexander J Sneyd, Kaiwen Zhang, Linjie Dai, Andrew J Britton, Junzhi Ye, Jaakko Julin, Mari Napari, Zhilong Zhang, James Xiao, Mikko Laitinen, Laura Torrente-Murciano, Samuel D Stranks, Akshay Rao, Laura M Herz, David O Scanlon, Aron Walsh, Robert Hoye

Abstract:

I-V-VI2 ternary chalcogenides are gaining attention as earth-abundant, nontoxic, and air-stable absorbers for photovoltaic applications. However, the semiconductors explored thus far have slowly-rising absorption onsets, and their charge-carrier transport is not well understood yet. Herein, we investigate cation-disordered NaBiS2 nanocrystals, which have a steep absorption onset, with absorption coefficients reaching >105 cm−1 just above its pseudo-direct bandgap of 1.4 eV. Surprisingly, we also observe an ultrafast (picosecond-time scale) photoconductivity decay and long-lived charge-carrier population persisting for over one microsecond in NaBiS2 nanocrystals. These unusual features arise because of the localised, non-bonding S p character of the upper valence band, which leads to a high density of electronic states at the band edges, ultrafast localisation of spatially-separated electrons and holes, as well as the slow decay of trapped holes. This work reveals the critical role of cation disorder in these systems on both absorption characteristics and charge-carrier kinetics.

Impact of hole-transport layer and interface passivation on halide segregation in mixed-halide perovskites

Advanced Functional Materials Wiley 32:41 (2022) 2204825

Authors:

Vincent JY Lim, Alexander J Knight, Robert DJ Oliver, Henry J Snaith, Michael B Johnston, Laura M Herz

Abstract:

Mixed-halide perovskites offer ideal bandgaps for tandem solar cells, but photoinduced halide segregation compromises photovoltaic device performance. This study explores the influence of a hole-transport layer, necessary for a full device, by monitoring halide segregation through in situ, concurrent X-ray diffraction and photoluminescence measurements to disentangle compositional and optoelectronic changes. This work demonstrates that top coating FA0.83Cs0.17Pb(Br0.4I0.6)3 perovskite films with a poly(triaryl)amine (PTAA) hole-extraction layer surprisingly leads to suppression of halide segregation because photogenerated charge carriers are rapidly trapped at interfacial defects that do not drive halide segregation. However, the generation of iodide-enriched regions near the perovskite/PTAA interface enhances hole back-transfer from the PTAA layer through improved energy level offsets, increasing radiative recombination losses. It is further found that while passivation with a piperidinium salt slows halide segregation in perovskite films, the addition of a PTAA top-coating accelerates such effects, elucidating the specific nature of trap types that are able to drive the halide segregation process. This work highlights the importance of selective passivation techniques for achieving efficient and stable wide-bandgap perovskite photovoltaic devices.

Applicability of tin-iodide perovskites for hot-carrier PV devices – ultrafast pump-push-probe study of hot-carrier cooling dynamics

Fundacio Scito (2022)

Authors:

Aleksander Ulatowski, Michael Farrar, Henry Snaith, Michael Johnston, Laura Herz

Excellent Long-Range Charge-Carrier Mobility in 2D Perovskites

Fundacio Scito (2022)

Authors:

Manuel Kober-Czerny, Silvia G Motti, Philippe Holzhey, Bernard Wenger, Laura M Herz, Jongchul Lim, Henry Snaith

Silver‐Bismuth Based 2D Double Perovskites (4FPEA)4AgBiX8 (X = Cl, Br, I): Highly Oriented Thin Films with Large Domain Sizes and Ultrafast Charge‐Carrier Localization

Advanced Optical Materials Wiley 10:14 (2022)

Authors:

Rik Hooijer, Andreas Weis, Alexander Biewald, Maximilian T Sirtl, Julian Malburg, Rico Holfeuer, Simon Thamm, Amir Abbas Yousefi Amin, Marcello Righetto, Achim Hartschuh, Laura M Herz, Thomas Bein