Snaith group

Abstract:

Metal halide perovskites have been demonstrated as one of the most promising materials for low-cost and high-performance photovoltaic applications. However, due to the susceptible crystallization process of perovskite films on planar substrates and the high sensitivity of the physical and optoelectronic nature of the internal interfaces within the devices, researchers in different laboratories still experience poor reproducibility in fabricating efficient perovskite solar cells with planar heterojunction device structures. In this methods paper, we present detailed information on the reagents, equipment, and procedures for the fabrication of planar perovskite solar cells in both “regular” n-i-p and “inverted” p-i-n architectures based on one-step solution-processed methylammonium lead triiodide (MAPbI3) perovskite films. We discuss key parameters affecting the crystallization of perovskite and the device interfaces. This methods paper will provide a guideline for the reproducible fabrication of planar heterojunction solar cells based on MAPbI3perovskite films. We believe that the shared experience on MA-based perovskite films and planar solar cells will be also useful for the optimization process of perovskites with varied compositions and other emerging perovskite-based optoelectronic devices.

Abstract:

In this work, solar cells with a freshly made CH3 NH3 PbI3 perovskite film showed a power conversion efficiency (PCE) of 15.4 % whereas the one with 50 days aged perovskite film only 6.1 %. However, when the aged perovskite was covered with a layer of Al2 O3 deposited by atomic layer deposition (ALD) at room temperature (RT), the PCE value was clearly enhanced. X-ray photoelectron spectroscopy study showed that the ALD precursors are chemically active only at the perovskite surface and passivate it. Moreover, the RT-ALD-Al2 O3 -covered perovskite films showed enhanced ambient air stability.

Abstract:

Air-stable doping of the n-type fullerene layer in an n-i-p planar heterojunction perovskite device is capable of enhancing device efficiency and improving device stability. Employing a (HC(NH2 )2 )0.83 Cs0.17 Pb(I0.6 Br0.4 )3 perovskite as the photoactive layer, glass-glass laminated devices are reported, which sustain 80% of their "post burn-in" efficiency over 3400 h under full sun illumination in ambient conditions.

Abstract:

Lead mixed halide perovskites are highly promising semiconductors for both multi-junction photovoltaic and light emitting applications due to their tunable band gaps, with emission and absorption energies spanning the UV-visible to near IR regions. However, many such perovskites exhibit unwanted halide segregation under photoillumination, the cause of which is still unclear. In our study, we establish crucial links between crystal phase stability, photostability and optoelectronic properties of the mixed-cation lead mixed-halide perovskite CsyFA(1-y)Pb(BrxI(1-x))3. We demonstrate a region for caesium content between 0.10 < y < 0.30 which features high crystalline quality, long chargecarrier lifetimes and high charge-carrier mobilities. Importantly, we show that for such high-quality perovskites, photoinduced halide segregation is strongly suppressed, suggesting that high crystalline quality is a prerequisite for good optoelectronic quality and band gap stability. We propose that regions of short-range crystalline order aid halide segregation, possibly by releasing lattice strain between iodide rich and bromide rich domains. For an optimized caesium content, we explore the orthogonal halide-variation parameter space for Cs0.17FA0.83Pb(BrxI(1-x))3 perovskites. We demonstrate excellent charge-carrier mobilities (11-40 cm2 V^−1 s^−1) and diffusion lengths (0.8 - 4.4 µm) under solar conditions across the full iodide-bromide tuning range. Therefore, the addition of caesium yields a more photostable perovskite system whose absorption onsets can be tuned for bandgap-optimized tandem solar cells.

Abstract:

We present herein an experimental screening study that assesses how partially replacing Pb in methylammonium lead triiodide perovskite films with nine different alternative, divalent metal species, B = {Co, Cu, Fe, Mg, Mn, Ni, Sn, Sr, and Zn}, influences photovoltaic performance and optical properties. Our findings indicate the perovskite film is tolerant to most of the considered homovalent metal species with lead-cobalt compositions yielding the highest power conversion efficiencies when less than 6% of the Pb2+ ions are replaced. Through subsequent materials characterisation, we demonstrate for the first time that partially substituting Pb2+ at the B-sites of the perovskite lattice is not restricted to Group IV elements but is also possible with at least Co2+. Moreover, adjusting the molar ratio of Pb:Co in the mixed-metal perovskite affords new opportunities to tailor the material properties while maintaining stabilised device efficiencies above 16% in optimised solar cells. Specifically, crystallographic analysis reveals that Co2+ incorporates into the perovskite lattice and increasing its concentration can mediate a crystal structure transition from the cubic to tetragonal phase at room-temperature. Likewise, Co2+ substitution continually modifies the perovskite work function and band edge energies without either changing the band gap or electronically doping the intrinsic material. By leveraging this orthogonal dimension of electronic tunability, we achieve remarkably high open-circuit voltages up to 1.08 V with an inverted device architecture by shifting the perovskite into a more favourable energetic alignment with the PEDOT:PSS hole transport material.