Snaith group

Abstract:

Two diacetylide-triphenylamine hole-transport materials (HTM) with varying redox potential have been applied in planar junction TiO2-[CH3NH3]PbI3-xClx solar cells leading to high power-conversion efficiencies up to 8.8%. More positive oxidation potential of the HTM gives higher VOC and lower JSC illustrating the role of matching energy levels, however both HTMs gave efficient cells despite a difference of 0.44 V in their redox potentials.

Abstract:

Herein we describe both theoretically and experimentally the optical response of solution-processed organic-inorganic halide perovskite solar cells based on mesostructured scaffolds. We develop a rigorous theoretical model using a method based on the propagation of waves in layered media, which allows visualizing the way in which light is spatially distributed across the device and serves to quantify the fraction of light absorbed by each medium comprising the cell. The discrimination between productive and parasitic absorption yields an accurate determination of the internal quantum efficiency. State-of-the-art devices integrating mesoporous scaffolds infiltrated with perovskite are manufactured and characterized to support the calculations. This combined experimental and theoretical analysis provides a rational understanding of the optical behavior of perovskite cells and can be beneficial for the judicious design of devices with improved performance. Notably, our model justifies the presence of a solid perovskite capping layer in all of the highest efficiency perovskite solar cells based on thinner mesoporous scaffolds.

Abstract:

In this paper we present a multiscale simulation of charge transport in a solid-state dye-sensitized solar cell, where the real morphology between TiO2 and the hole transport material is included. The geometry of the interface is obtained from an electron tomography measurement and imported in a simulation software. Charge distribution, electric field and current densities are computed using the drift-diffusion model. We use this approach to investigate the electrostatic effect of trap states at the interface between the electron and hole transport materials. The simulations show that when the trapped electrons are not screened by external additives, the dynamics of holes is perturbed. Holes accumulate at the interface, enhancing recombination and reducing cell performance.