Snaith group

Abstract:

Room-temperature spin-based electronics is the vision of spintronics. Presently, there are few suitable material systems. Herein, we reveal that solution-processed mixed-phase Ruddlesden-Popper perovskite thin-films transcend the challenges of phonon momentum-scattering that limits spin-transfer in conventional semiconductors. This highly disordered system exhibits a remarkable efficient ultrafast funneling of photoexcited spin-polarized excitons from two-dimensional (2D) to three-dimensional (3D) phases at room temperature. We attribute this efficient exciton relaxation pathway towards the lower energy states to originate from the energy transfer mediated by intermediate states. This process bypasses the omnipresent phonon momentum-scattering in typical semiconductors with stringent band dispersion, which causes the loss of spin information during thermalization. Film engineering using graded 2D/3D perovskites allows unidirectional out-of-plane spin-funneling over a thickness of ~600 nm. Our findings reveal an intriguing family of solution-processed perovskites with extraordinary spin-preserving energy transport properties that could reinvigorate the concepts of spin-information transfer.

Abstract:

Metal halide perovskite semiconductors have the potential to enable low-cost, flexible and efficient solar cells for a wide range of applications. Physical vapour deposition by co-evaporation of precursors is a method which results in very smooth and pin-hole-free perovskite thin films and allows excellent control over film thickness and composition. However, for a deposition method to become industrially scalable, reproducible process control and high device yields are essential. Unfortunately, to date the control and reproducibility of evaporating organic precursors such as methylammonium iodide (MAI) has proved extremely challenging. We show that the established method of controlling the evaporation-rate of MAI with quartz micro balances (QMBs) is critically sensitive to the concentration of the impurities MAH2PO3 and MAH2PO2 that are usually present in MAI after synthesis. Therefore, controlling the deposition rate of MAI with QMBs is unreliable since the concentration of such impurities typically varies from MAI batch-to-batch and even during the course of a deposition. However once reliable control of MAI deposition is achieved, we find that the presence of precursor impurities during perovskite deposition does not degrade solar cell performance. Our results indicate that as long as precursor deposition rates are well controlled, physical vapour deposition will allow high solar cell device yields even if the purity of precursors change from run to run.

Abstract:

Solar cells based on metal halide perovskites are one of the most promising photovoltaic technologies1,2,3,4. Over the past few years, the long-term operational stability of such devices has been greatly improved by tuning the composition of the perovskites5,6,7,8,9, optimizing the interfaces within the device structures10,11,12,13, and using new encapsulation techniques14,15. However, further improvements are required in order to deliver a longer-lasting technology. Ion migration in the perovskite active layer—especially under illumination and heat—is arguably the most difficult aspect to mitigate16,17,18. Here we incorporate ionic liquids into the perovskite film and thence into positive–intrinsic–negative photovoltaic devices, increasing the device efficiency and markedly improving the long-term device stability. Specifically, we observe a degradation in performance of only around five per cent for the most stable encapsulated device under continuous simulated full-spectrum sunlight for more than 1,800 hours at 70 to 75 degrees Celsius, and estimate that the time required for the device to drop to eighty per cent of its peak performance is about 5,200 hours. Our demonstration of long-term operational, stable solar cells under intense conditions is a key step towards a reliable perovskite photovoltaic technology.

Abstract:

A series of Er-based nitride clusterfullerenes (NCFs), Er₃N@C_80-88, have been successfully synthesized and isolated. In particular, Er₃N@I_h(7)-C₈₀, Er₃N@D_5h(6)-C₈₀, Er₃N@C_2v(9)-C₈₂, Er₃N@C_s(51365)-C₈₄, and Er₃N@D₂(35)-C₈₈ have been characterized by single-crystal X-ray diffraction (XRD) for the first time. The planar configuration of the inserted Er₃N cluster is identified unambiguously and the Er-N distances increase in accordance with cage expansion to maintain strong metal-cage interactions. Additionally, the electrochemical properties of the Er₃N@C_80-88 series are studied by means of cyclic voltammetry. It is found that the first reduction potentials are roughly similar for all compounds under study, while the first oxidation potentials are cathodically shifted along with the increase of the cage size in the Er₃N@C_2n (2n = 80, 84, 86, 88) series, leading to a decrease in the corresponding electrochemical band gaps. Nevertheless, for Er₃N@C_2v(9)-C₈₂, a good electron donating ability is manifested by its relatively small first oxidation potential, which results from the relatively higher energy level of the highest occupied molecular orbital. The redox behaviors observed in such Er₃N-based NCFs may promise their great potential applications in donor-acceptor systems.