Exciton dissociation in polymer field-effect transistors studied using terahertz spectroscopy

Physical Review B - Condensed Matter and Materials Physics 77:12 (2008)

Authors:

J Lloyd-Hughes, T Richards, H Sirringhaus, MB Johnston, LM Herz

Abstract:

We have used terahertz time-domain spectroscopy to investigate photoinduced charge generation in conjugated polymer field-effect transistors. Our measurements show that excitons dissociate in the accumulation layer under the application of a gate voltage, with a quantum efficiency of ∼0.1 for an average gate field of ∼1× 108 V m-1. The transistor history is found to affect the exciton dissociation efficiency, which decreases as holes are increasingly trapped in the accumulation layer. The quantum efficiency of charge formation from excitons is compared with the two contrasting models proposed by Onsager and Arkhipov based on the assumption that field-induced exciton dissociation is assisted by the Brownian diffusive motion or an initial excess energy supplied by excited vibrational modes, respectively. © 2008 The American Physical Society.

Terahertz-frequency conductivity of charge stripes in the antiferromagnet La5/3Sr1/3NiO4

IRMMW-THz2007 - Conference Digest of the Joint 32nd International Conference on Infrared and Millimetre Waves, and 15th International Conference on Terahertz Electronics (2007) 869-870

Authors:

J Lloyd-Hughes, D Prabhakaran, E Castro-Camus, AT Boothroyd, MB Johnston

Abstract:

We report the complex refractive index of La5/3Sr 1/3NiO4 over the terahertz frequency range, obtained using time-domain spectroscopy. Negligible change in the complex refractive index with magnetic flux densities up to 6 T was seen, while changes were observed as the lattice temperature was increased from 1.5K to the charge-ordering temperature at 220 K. The terahertz frequency response therefore originates from the dielectric function rather than the magnetic permeability.

Excitation-density-dependent generation of broadband terahertz radiation in an asymmetrically excited photoconductive antenna.

Opt Lett 32:16 (2007) 2297-2299

Authors:

Prashanth C Upadhya, Wenhui Fan, Andrew Burnett, John Cunningham, A Giles Davies, Edmund H Linfield, James Lloyd-Hughes, Enrique Castro-Camus, Michael B Johnston, Harvey Beere

Abstract:

The generation of terahertz (THz) transients in photoconductive emitters has been studied by varying the spatial extent and density of the optically excited photocarriers in asymmetrically excited, biased low-temperature-grown GaAs antenna structures. We find a pronounced dependence of the THz pulse intensity and broadband (>6.0 THz) spectral distribution on the pump excitation density and simulate this with a three-dimensional carrier dynamics model. We attribute the observed variation in THz emission to changes in the strength of the screening field.

Transient terahertz conductivity of GaAs nanowires

Nano Letters 7:7 (2007) 2162-2165

Authors:

P Parkinson, J Lloyd-Hughes, Q Gao, HH Tan, C Jagadish, MB Johnston, LM Herz

Abstract:

The time-resolved conductivity of isolated GaAs nanowires is investigated by optical-pump terahertz-probe time-domain spectroscopy. The electronic response exhibits a pronounced surface plasmon mode that forms within 300 fs before decaying within 10 ps as a result of charge trapping at the nanowire surface. The mobility is extracted using the Drude model for a plasmon and found to be remarkably high, being roughly one-third of that typical for bulk GaAs at room temperature. © 2007 American Chemical Society.

An ion-implanted InP receiver for polarization resolved terahertz spectroscopy.

Opt Express 15:11 (2007) 7047-7057

Authors:

E Castro-Camus, J Lloyd-Hughes, L Fu, HH Tan, C Jagadish, Michael B Johnston

Abstract:

We report on the construction, optical alignment and performance of a receiver which is capable of recording the full polarization state of coherent terahertz radiation. The photoconductive detector was fabricated on InP which had been implanted with Fe(+) ions. The device operated successfully when it was gated with near infrared femtosecond pulses from either a Ti:sapphire laser oscillator or a 1 kHz regenerative laser amplifier. When illuminated with terahertz radiation from a typical photoconductive source, the optimized device had a signal to noise figure of 100:1 with a usable spectral bandwidth of up to 4 THz. The device was shown to be very sensitive to terahertz polarization, being able to resolve changes in polarization of 0.34 degrees. Additionally, we have demonstrated the usefulness of this device for (i) polarization sensitive terahertz spectroscopy, by measuring the birefringence of quartz and (ii) terahertz emission experiments, by measuring the polarization dependence of radiation generated by optical rectification in (110)-ZnTe.