Exciton dissociation in polymer field-effect transistors studied using terahertz spectroscopy
Physical Review B - Condensed Matter and Materials Physics 77:12 (2008)
Abstract:
We have used terahertz time-domain spectroscopy to investigate photoinduced charge generation in conjugated polymer field-effect transistors. Our measurements show that excitons dissociate in the accumulation layer under the application of a gate voltage, with a quantum efficiency of ∼0.1 for an average gate field of ∼1× 108 V m-1. The transistor history is found to affect the exciton dissociation efficiency, which decreases as holes are increasingly trapped in the accumulation layer. The quantum efficiency of charge formation from excitons is compared with the two contrasting models proposed by Onsager and Arkhipov based on the assumption that field-induced exciton dissociation is assisted by the Brownian diffusive motion or an initial excess energy supplied by excited vibrational modes, respectively. © 2008 The American Physical Society.Terahertz-frequency conductivity of charge stripes in the antiferromagnet La5/3 Sr1/3 NiO4
IRMMW-THz2007 - Conference Digest of the Joint 32nd International Conference on Infrared and Millimetre Waves, and 15th International Conference on Terahertz Electronics (2007) 869-870
Abstract:
We report the complex refractive index of La5/3Sr 1/3NiO4 over the terahertz frequency range, obtained using time-domain spectroscopy. Negligible change in the complex refractive index with magnetic flux densities up to 6 T was seen, while changes were observed as the lattice temperature was increased from 1.5K to the charge-ordering temperature at 220 K. The terahertz frequency response therefore originates from the dielectric function rather than the magnetic permeability.Excitation-density-dependent generation of broadband terahertz radiation in an asymmetrically excited photoconductive antenna.
Opt Lett 32:16 (2007) 2297-2299
Abstract:
The generation of terahertz (THz) transients in photoconductive emitters has been studied by varying the spatial extent and density of the optically excited photocarriers in asymmetrically excited, biased low-temperature-grown GaAs antenna structures. We find a pronounced dependence of the THz pulse intensity and broadband (>6.0 THz) spectral distribution on the pump excitation density and simulate this with a three-dimensional carrier dynamics model. We attribute the observed variation in THz emission to changes in the strength of the screening field.Transient terahertz conductivity of GaAs nanowires
Nano Letters 7:7 (2007) 2162-2165
Abstract:
The time-resolved conductivity of isolated GaAs nanowires is investigated by optical-pump terahertz-probe time-domain spectroscopy. The electronic response exhibits a pronounced surface plasmon mode that forms within 300 fs before decaying within 10 ps as a result of charge trapping at the nanowire surface. The mobility is extracted using the Drude model for a plasmon and found to be remarkably high, being roughly one-third of that typical for bulk GaAs at room temperature. © 2007 American Chemical Society.An ion-implanted InP receiver for polarization resolved terahertz spectroscopy.
Opt Express 15:11 (2007) 7047-7057