Enhanced coherent THz emission from (100) GaAs in the presence of a magnetic field
Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest (2000) 554-555
Abstract:
The effects of magnetic fields up to 8T on the THz emission from a bulk (100) n-type molecular beam epitaxy (MBE)-grown GaAs sample were studied. Magnetic field was applied in the plane of incidence parallel to the reflected THz beam. The emitted THz radiation was measured both by an incoherent bolometer detection scheme and coherent free-space electro-optic (EOS) sampling. Overall, significant data was obtained.Carrier capture and relaxation in Stranski-Krastanow InxGa1-xAs/GaAs(311)B quantum dots
PHYSICAL REVIEW B 62:4 (2000) 2737-2742
Influence on GaAs/AlGaAs quantum well infrared photodetector of proton implantation and rapid thermal annealing
JOURNAL OF INFRARED AND MILLIMETER WAVES 19:1 (2000) 25-28
Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing
JOURNAL OF APPLIED PHYSICS 87:3 (2000) 1566-1568
Application of selective implantation induced intermixing on V-grooved AlGaAs/GaAs coupled quantum wire
Institute of Electrical and Electronics Engineers (IEEE) (1999) 513-515