Terahertz photonics

Abstract:

We have investigated the terahertz conductivity of extrinsic and photoexcited electrons in nanoporous indium phosphide (InP) at different pore densities and orientations. The form of electronic transport in the film was found to differ significantly from that for bulk InP. While photo-generated electrons showed Drude-like transport, the behaviour for extrinsic electrons deviated significantly from the Drude model. Time-resolved photoconductivity measurements found that carrier recombination was slow, with lifetimes exceeding 1 ns for all porosities and orientations. When considered together, these findings suggest that the surfaces created by the nanopores strongly alter the dynamics of both extrinsic and photoexcited electrons.

Abstract:

Using optical-pump terahertz-probe spectroscopy, we have investigated the time-resolved conductivity dynamics of photoexcited polymer-fullerene bulk heterojunction blends for two model polymers: poly[3-hexylthiophene] (P3HT) and poly[2-methoxy-5- (3,7 -dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) blended with [6,6]-phenyl-C61 butyric acid methyl ester (PCBM). The observed terahertz-frequency conductivity is characteristic of dispersive charge transport for photoexcitation both at the π-π* absorption peak (560 nm for P3HT) and significantly below it (800 nm). The photoconductivity at 800 nm is unexpectedly high, which we attribute to the presence of a charge-transfer complex. We report the excitation-fluence dependence of the photoconductivity over more than four orders of magnitude, obtained by utilizing a terahertz spectrometer based upon on either a laser oscillator or an amplifier source. The time-averaged photoconductivity of the P3HT:PCBM blend is over 20 times larger than that of P3HT, indicating that long-lived hole polarons are responsible for the high photovoltaic efficiency of polymer:fullerene blends. At early times (∼ps) the linear dependence of photoconductivity upon fluence indicates that interfacial charge transfer dominates as an exciton decay pathway, generating charges with mobility of at least ∼0.1 cm2 V-1 s -1. At later times, a sublinear relationship shows that carrier-carrier recombination effects influence the conductivity on a longer time scale (>1 μs) with a bimolecular charge annihilation constant for the blends that is approximately two to three orders of magnitude smaller than that typical for neat polymer films. © 2008 The American Physical Society.

Abstract:

Photoconductive detectors are convenient devices for detecting pulsed terahertz radiation. We have optimized Fe+ ion-damaged InP materials for photoconductive detector signal to noise performance using dual-energy doses in the range from 2.5× 1012 to 1.0× 1016 cm-2. Ion implantation allowed the production of semiconducting materials with free-carrier lifetimes between 0.5 and 2.1 ps, which were measured by optical pump terahertz probe spectroscopy. The time resolved photoconductivity of the detector substrates was acquired as a function of time after excitation by 2 nJ pulses from a laser oscillator. These data, when combined with a deconvolution algorithm, provide an excellent spectral response correction to the raw photocurrent signal recorded by the photoconductive detectors. © 2008 American Institute of Physics.

Abstract:

Nanostructured semiconductors with favorable optoelectronic properties can be created by electrochemical etching, a fabrication process that is scalable for mass market applications. Using terahertz photoconductivity measurements, we demonstrate that nanoporous InP has an unusually long carrier recombination lifetime that exceeds 100 ns at low temperatures and low carrier density, and an electron mobility half that of bulk InP. Modeling confirms that these observations result from band bending with holes confined to the surface and electrons away from the pores. © 2008 The American Physical Society.

Abstract:

We have investigated charge dynamics in the static stripe ordered phase of La2-x Srx Ni O4+δ at lattice temperatures below the charge ordering transition, via optical conductivity measurements at low energies (1-10 meV). The thermally activated dynamic response of the charge stripes is found to be characteristic of a collective mode such as a pinned charge density wave. At incommensurate doping levels, the pinning energy is reduced, owing to the presence of real-space defects in the stripe order, and a pronounced increase in the oscillator strength is seen. The results provide compelling evidence for the existence of low-energy collective modes of the charge stripes. © 2008 The American Physical Society.