Terahertz photonics

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Enhancement of THz emission from semiconductor devices

COMMAD 2002 PROCEEDINGS (2002) 281-284

Authors:

A Dowd, MB Johnston, DM Whittaker, AG Davies, EH Linfield
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Enhancement of terahertz emission from semiconductor surfaces

THZ 2002: IEEE TENTH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS PROCEEDINGS (2002) 48-51

Authors:

MB Johnston, A Dowd, DM Whittaker, A Corchia, AG Davies, EH Linfield
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Thermally stimulated luminescence in ion-implanted GaAs

JOURNAL OF LUMINESCENCE 96:2-4 (2002) PII S0022-2313(01)00219-8

Authors:

M Gal, LV Dao, E Kraft, MB Johnston, C Carmody, HH Tan, C Jagadish
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Effects of magnetic field and optical fluence on terahertz emission in gallium arsenide

Physical Review B - Condensed Matter and Materials Physics 64:20 (2001) 2052041-2052045

Authors:

MB Johnston, DM Whittaker, DD Arnone, EH Linfield, AG Davies

Abstract:

The excitation density dependence of magnetic-field-enhanced terahertz (THz = 1012 Hz) emission from (100) GaAs is studied. It is found that THz power saturates at a higher optical-excitation density, when a magnetic field is applied. This observation explains the different magnetic field enhancements that have been reported recently. At low excitation densities the results are shown to be consistent with a simple model of carrier-carrier scattering, whilst at higher densities surface field screening becomes important.

Effects of magnetic field and optical fluence on terahertz emission in gallium arsenide

Physical Review B - Condensed Matter and Materials Physics 64:20 (2001) 2052041-2052045

Authors:

A Corchia, R McLaughlin, MB Johnston, DM Whittaker, DD Arnone, EH Linfield, AG Davies, M Pepper

Abstract:

The excitation density dependence of magnetic-field-enhanced terahertz (THz = 1012 Hz) emission from (100) GaAs is studied. It is found that THz power saturates at a higher optical-excitation density, when a magnetic field is applied. This observation explains the different magnetic field enhancements that have been reported recently. At low excitation densities the results are shown to be consistent with a simple model of carrier-carrier scattering, whilst at higher densities surface field screening becomes important.
More details from the publisher
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