Photovoltaic performance of FAPbI3 perovskite is hampered by intrinsic quantum confinement

ACS Energy Letters American Chemical Society 8:6 (2023) 2543-2551

Authors:

Karim A Elmestekawy, Benjamin M Gallant, Adam D Wright, Philippe Holzhey, Nakita K Noel, Michael B Johnston, Henry J Snaith, Laura M Herz

Abstract:

Formamidinium lead trioiodide (FAPbI3) is a promising perovskite for single-junction solar cells. However, FAPbI3 is metastable at room temperature and can cause intrinsic quantum confinement effects apparent through a series of above-bandgap absorption peaks. Here, we explore three common solution-based film-fabrication methods, neat N,N-dimethylformamide (DMF)–dimethyl sulfoxide (DMSO) solvent, DMF-DMSO with methylammonium chloride, and a sequential deposition approach. The latter two offer enhanced nucleation and crystallization control and suppress such quantum confinement effects. We show that elimination of these absorption features yields increased power conversion efficiencies (PCEs) and short-circuit currents, suggesting that quantum confinement hinders charge extraction. A meta-analysis of literature reports, covering 244 articles and 825 photovoltaic devices incorporating FAPbI3 films corroborates our findings, indicating that PCEs rarely exceed a 20% threshold when such absorption features are present. Accordingly, ensuring the absence of these absorption features should be the first assessment when designing fabrication approaches for high-efficiency FAPbI3 solar cells.

Thermally stable perovskite solar cells by all-vacuum deposition

ACS Applied Materials and Interfaces American Chemical Society 15:1 (2022) 772-781

Abstract:

Vacuum deposition is a solvent-free method suitable for growing thin films of metal halide perovskite (MHP) semiconductors. However, most reports of high-efficiency solar cells based on such vacuum-deposited MHP films incorporate solution-processed hole transport layers (HTLs), thereby complicating prospects of industrial upscaling and potentially affecting the overall device stability. In this work, we investigate organometallic copper phthalocyanine (CuPc) and zinc phthalocyanine (ZnPc) as alternative, low-cost, and durable HTLs in all-vacuum-deposited solvent-free formamidinium-cesium lead triodide [CH(NH2)2]0.83Cs0.17PbI3 (FACsPbI3) perovskite solar cells. We elucidate that the CuPc HTL, when employed in an “inverted” p–i–n solar cell configuration, attains a solar-to-electrical power conversion efficiency of up to 13.9%. Importantly, unencapsulated devices as large as 1 cm2 exhibited excellent long-term stability, demonstrating no observable degradation in efficiency after more than 5000 h in storage and 3700 h under 85 °C thermal stressing in N2 atmosphere.

Outstanding Reviewers for Energy & Environmental Science in 2021

Royal Society of Chemistry (RSC) 15:8 (2022) 3113-3113

Combining Spatial and Temporal Resolution in Cryo-TEM of Device Materials

Microscopy and Microanalysis Oxford University Press (OUP) 28:S1 (2022) 2162-2163

Authors:

Nikita S Dutta, Nakita K Noel, Craig B Arnold, Katherine Jungjohann, Mowafak Al-Jassim

Improved charge balance in green perovskite light-emitting diodes with atomic layer-deposited Al2O3

ACS Applied Materials and Interfaces American Chemical Society 14:30 (2022) 34247-34252

Authors:

William B Gunnarsson, Zhaojian Xu, Nakita K Noel, Barry P Rand

Abstract:

Perovskite light-emitting diodes (LEDs) have experienced a rapid increase in efficiency over the last several years and are now regarded as promising low-cost devices for displays and communication systems. However, it is often challenging to employ ZnO, a well-studied electron transport material, in perovskite LEDs due to chemical instability at the ZnO/perovskite interface and charge injection imbalance caused by the relatively high conductivity of ZnO. In this work, we address these problems by depositing an ultrathin Al<sub>2</sub>O<sub>3</sub> interlayer at the ZnO/perovskite interface, allowing the fabrication of green-emitting perovskite LEDs with a maximum luminance of 21 815 cd/m<sup>2</sup>. Using atomic layer deposition, we can precisely control the Al<sub>2</sub>O<sub>3</sub> thickness and thus fine-tune the electron injection from ZnO, allowing us to enhance the efficiency and operational stability of our LEDs.