Prof Yulin Chen

Abstract:

Magnetic/superconducting heterostructures represent a frontier in condensed matter physics, offering pathways to realize unconventional pairing mechanisms such as topological superconductivity, spin-triplet pairing, and Majorana zero modes for fault-tolerant quantum computing. In this work, we integrate the magnetic van der Waals material MnBi₂Te₄ (MBT) with a superconducting NbN thin film, achieving ultralow-disorder interfaces through Ti buffer layer engineering. Temperature- and field-dependent critical currents, extracted from differential resistance spectra, reveal robust coupling between the MnBi₂Te₄ and the superconducting order of NbN, enabling proximity-induced superconductivity within MnBi₂Te₄. Notably, the proximity-induced critical currents remain invariant under in-plane field rotation, in contrast to the anisotropic response observed in pristine NbN. Moreover, the hysteretic behavior observed in the interfacial magnetoresistance curves confirms the proximity-induced spin polarization at the MBT interface, which is consistent with Andreev reflection results. These findings demonstrate a platform for fabricating high-quality heterointerfaces and enable targeted exploration of exotic quantum states.

Abstract:

The discovery of superconductivity in pressurized Ruddlesden-Popper (RP) nickelates has provided new perspectives on the mechanism of high-temperature superconductivity. Up to now, most experiments concentrated on the lanthanum-related RP phase, so the discovery of new superconducting RP nickelates is highly desirable to reveal their generality. Here we report the observation of superconductivity in Pr4Ni3O10 single crystals above 10 GPa, achieving a maximum Tc of 39 K without saturation, significantly exceeding the value of 25–30 K of La4Ni3O10. Ultrasensitive magnetic susceptibility measurements under high pressure indicate bulk superconductivity with appreciable superconducting volume fractions. Unlike La4Ni3O10, the electronic structure of the high-pressure phase of Pr4Ni3O10 exhibits a dramatic metallization of the σ-bonding band consisting of three dz2$$d_{z^{2}}$$ orbitals and van Hove singularity of coupled bands of dx2−y2$$d_{x^{2}-y^{2}}$$ orbitals near the Fermi level, similar to La3Ni2O7. These findings reveal some generic features of both crystal and electronic structures for high-temperature superconductivity in nickelates and multi-layer cuprates.

Abstract:

Graphene-based systems have emerged as a rich platform for exploring emergent quantum phenomena—including superconductivity, magnetism, and correlated insulating behavior—arising from flat electronic bands that enhance many-body interactions. Realizing such flat bands has thus far relied primarily on moiré graphene superlattices or rhombohedral stacking graphene systems, both of which face challenges in reproducibility and tunability. Here, we introduce an artificial Kagome superlattice in bilayer graphene, engineered via nanopatterning of the dielectric substrate to create a precisely defined and electrostatically tunable periodic potential. Magnetotransport measurements reveal the emergence of a stack of correlated insulating states at moderate superlattice potentials, characteristic of strong electron–electron interactions within Kagome-induced flat bands. As temperature increases, these correlated gaps collapse, signaling the thermal suppression of interaction-driven states. Continuum-model calculations confirm the formation of multiple flat minibands and reproduce the observed evolution of band reconstruction. Our results establish dielectric-patterned graphene superlattices as a robust and controllable architecture for realizing flat-band–induced correlated phenomena beyond moiré systems.

Abstract:

The pursuit of emergent quantum phenomena lies at the forefront of modern condensed matter physics. A recent breakthrough in this arena is the discovery of the fractional quantum anomalous Hall effect (FQAHE) in twisted bilayer MoTe₂ (tbMoTe₂), marking a paradigm shift and establishing a versatile platform for exploring the intricate interplay among topology, magnetism, and electron correlations. While significant progress has been made through both optical and electrical transport measurements, direct experimental insights into the electronic structure – crucial for understanding and modeling this system – have remained elusive. Here, using spatially and angle-resolved photoemission spectroscopy (μ-ARPES), we directly map the electronic band structure of tbMoTe₂. We identify the valence band maximum, whose partial filling underlies the FQAHE, at the K points, situated approximately 150 meV above the Γ valley. By fine-tuning the doping level via in-situ alkali metal deposition, we also resolve the conduction band minimum at the K point, providing direct evidence that tbMoTe₂ exhibits a direct band gap – distinct from all previously known moiré bilayer transition metal dichalcogenide systems. These results offer critical insights for theoretical modeling and advance our understanding of fractionalized excitations and correlated topological phases in this emergent quantum material.