Wafer‐scale epitaxial growth of the thickness‐controllable van der Waals ferromagnet CrTe2 for reliable magnetic memory applications
Advanced Functional Materials Wiley 33:50 (2023) 2304454
Abstract:
To harness the intriguing properties of 2D van der Waals (vdW) ferromagnets (FMs) for versatile applications, the key challenge lies in the reliable material synthesis for scalable device production. Here, the epitaxial growth of single-crystalline 1T-CrTe2 thin films on 2-inch sapphire substrates are demonstrated. Benefiting from the uniform surface energy of the dangling bond-free Al2O3(0001) surface, the layer-by-layer vdW growth mode is observed right from the initial growth stage, which warrants precise control of the sample thickness beyond three monolayer and homogeneous surface morphology across the entire wafer. Moreover, the presence of the Coulomb interaction at the CrTe2/Al2O3 interface plays an important role in tailoring the anomalous Hall response, and the structural optimization of the CrTe2-based spin-orbit torque device leads to a substantial switching power reduction by 54%. The results may lay out a general framework for the design of energy-efficient spintronics based on configurable vdW FMs.Measurement of the electronic structure of a type-II topological Dirac semimetal candidate VAl3 using angle-resolved photoelectron spectroscopy
Tungsten Springer Nature 5:3 (2023) 332-338
Orbital-selective charge-density wave in TaTe4
npj Quantum Materials Springer Nature 8:1 (2023) 44
Twist-Induced Modification in the Electronic Structure of Bilayer WSe2.
Nano letters 23:15 (2023) 7008-7013
Abstract:
The recent discovery of strongly correlated phases in twisted transition-metal dichalcogenides (TMDs) highlights the significant impact of twist-induced modifications on electronic structures. In this study, we employed angle-resolved photoemission spectroscopy with submicrometer spatial resolution (μ-ARPES) to investigate these modifications by comparing valence band structures of twisted (5.3°) and nontwisted (AB-stacked) bilayer regions within the same WSe2 device. Relative to the nontwisted region, the twisted area exhibits pronounced moiré bands and ∼90 meV renormalization at the Γ-valley, substantial momentum separation between different layers, and an absence of flat bands at the K-valley. We further simulated the effects of lattice relaxation, which can flatten the Γ-valley edge but not the K-valley edge. Our results provide a direct visualization of twist-induced modifications in the electronic structures of twisted TMDs and elucidate their valley-dependent responses to lattice relaxation.Pressure-induced superconductivity in topological heterostructure (PbSe)5(Bi2Se3)6
Science China Materials Springer Nature 66:7 (2023) 2822-2828