Prof Yulin Chen

Abstract:

Broadband transparent electrodes based on a two-dimensional grid of topological insulator Bi2Se3 are synthesized by a facile selective-area van der Waals epitaxy method. These two-dimensional grid electrodes exhibit high uniformity over large area, outstanding mechanical durability, and excellent chemical resistance to environmental perturbations. Remarkably, the topological grid electrode has high transmittance of more than 85% from the visible to the near-infrared region. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Abstract:

In the past few years, a new state of quantum matter known as the time-reversal-invariant topological insulator has been predicted theoretically and realized experimentally. All of the topological insulators discovered so far in experiment are inversion symmetric-except for strained HgTe, which has weak inversion asymmetry, a small bulk gap but no bulk charge polarization. Strong inversion asymmetry in topological insulators would not only lead to many interesting phenomena, such as crystalline-surface-dependent topological electronic states, pyroelectricity and intrinsic topological p-n junctions, but would also serve as an ideal platform for the realization of topological magneto-electric effects, which result from the modification of Maxwell equations in topological insulators. Here we report the discovery of a strong inversion asymmetric topological insulator phase in BiTeCl by angle-resolved photoemission spectroscopy, which reveals Dirac surface states and crystalline-surface-dependent electronic structures. Moreover, we observe a tenfold increase of the bulk energy gap in BiTeCl over the weak inversion asymmetric topological insulator HgTe, making it a promising platform for topological phenomena and possible applications at high temperature.

Abstract:

Thin film GdBiTe3 has been proposed as a candidate material in which to observe the quantum anomalous Hall effect. As a thermal non-equilibrium deposition method, molecular beam epitaxy (MBE) has the ability to incorporate large amounts of Gd into Bi2Te3 crystal structures. High-quality rhombohedral (GdxBi1−x)2Te3 films with substitutional Gd concentrations of x ≤ 0.4 were grown by MBE. Angle-resolved photoemission spectroscopy shows that the topological surface state remains intact up to the highest Gd concentration. Magnetoresistance measurements show weak antilocalization, indicating strong spin orbit interaction. Magnetometry reveals that the films are paramagnetic with a magnetic moment of 6.93 μB per Gd3+ ion.

Abstract:

In the past few years, a new state of quantum matter known as the time-reversal-invariant topological insulator has been predicted theoretically and realized experimentally. All of the topological insulators discovered so far in experiment are inversion symmetric - except for strained HgTe, which has weak inversion asymmetry, a small bulk gap but no bulk charge polarization. Strong inversion asymmetry in topological insulators would not only lead to many interesting phenomena, such as crystalline-surface-dependent topological electronic states, pyroelectricity and intrinsic topological p-n junctions, but would also serve as an ideal platform for the realization of topological magneto-electric effects, which result from the modification of Maxwell equations in topological insulators. Here we report the discovery of a strong inversion asymmetric topological insulator phase in BiTeCl by angle-resolved photoemission spectroscopy, which reveals Dirac surface states and crystalline-surface-dependent electronic structures. Moreover, we observe a tenfold increase of the bulk energy gap in BiTeCl over the weak inversion asymmetric topological insulator HgTe, making it a promising platform for topological phenomena and possible applications at high temperature. © 2013 Macmillan Publishers Limited.