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A VUV sub-micron hotspot for photoemission spectroscopy

Vacuum ultraviolet (VUV) lasers have exhibited great potential as the light source for various spectroscopies, which, if they can be focused into a smaller beam spot, will not only allow investigation of mesoscopic materials but also find applications in manufacture of nano-objects with excellent precision. Towards this goal, scientists in China invented a 177 nm VUV laser system that can achieve a record-small (<1 μm) focal spot at a long focal length (~45 mm). This system can be re-equipped for usage in low-cost ARPES and might benefit quantum materials, condensed matter physics and nanophotonics.

Prof Yulin Chen

Professor of Physics

Research theme

  • Quantum materials

Sub department

  • Condensed Matter Physics

Research groups

  • Electronic structures and photoemission spectroscopy
yulin.chen@physics.ox.ac.uk
Clarendon Laboratory, room RM263, Mullard Bldg.
Recent publications
  • About
  • Publications

Growth of Bi2Se3 and Bi2Te3 on amorphous fused silica by MBE

physica status solidi (b) Wiley (2015) n/a-n/a

Authors:

Liam Collins-McIntyre, W Wang, B Zhou, SC Speller, YL Chen, T Hesjedal

Abstract:

Topological insulator (TI) thin films of Biinline imageSeinline image and Biinline imageTeinline image have been successfully grown on amorphous fused silica (vitreous SiOinline image) substrates by molecular beam epitaxy. We find that such growth is possible and investigations by X-ray diffraction reveal good crystalline quality with a high degree of order along the c-axis. Atomic force microscopy, electron backscatter diffraction and X-ray reflectivity are used to study the surface morphology and structural film parameters. Angle-resolved photoemission spectroscopy studies confirm the existence of a topological surface state. This work shows that TI films can be grown on amorphous substrates, while maintaining the topological surface state despite the lack of in-plane rotational order of the domains. The growth on fused silica presents a promising route to detailed thermoelectric measurements of TI films, free from unwanted thermal, electrical, and piezoelectric influences from the substrate.
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Preparation of layered thin film samples for angle-resolved photoemission spectroscopy

Applied Physics Letters AIP Publishing 105:12 (2014) 121608

Authors:

SE Harrison, B Zhou, Y Huo, A Pushp, AJ Kellock, SSP Parkin, JS Harris, Y Chen, T Hesjedal
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Molecular beam epitaxial growth of a three-dimensional topological Dirac semimetal Na3Bi

Applied Physics Letters AIP Publishing 105:3 (2014) 031901

Authors:

Yi Zhang, Zhongkai Liu, Bo Zhou, Yeongkwan Kim, Zahid Hussain, Zhi-Xun Shen, Yulin Chen, Sung-Kwan Mo
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A stable three-dimensional topological Dirac semimetal Cd3As2

Nature Materials Springer Nature 13:7 (2014) 677-681

Authors:

ZK Liu, J Jiang, B Zhou, ZJ Wang, Y Zhang, HM Weng, D Prabhakaran, S-K Mo, H Peng, P Dudin, T Kim, M Hoesch, Z Fang, X Dai, ZX Shen, DL Feng, Z Hussain, YL Chen
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Discovery of a three-dimensional topological Dirac semimetal, Na3Bi.

Science 343:6173 (2014) 864-867

Authors:

ZK Liu, B Zhou, Y Zhang, ZJ Wang, HM Weng, D Prabhakaran, S-K Mo, ZX Shen, Z Fang, X Dai, Z Hussain, YL Chen

Abstract:

Three-dimensional (3D) topological Dirac semimetals (TDSs) represent an unusual state of quantum matter that can be viewed as "3D graphene." In contrast to 2D Dirac fermions in graphene or on the surface of 3D topological insulators, TDSs possess 3D Dirac fermions in the bulk. By investigating the electronic structure of Na3Bi with angle-resolved photoemission spectroscopy, we detected 3D Dirac fermions with linear dispersions along all momentum directions. Furthermore, we demonstrated the robustness of 3D Dirac fermions in Na3Bi against in situ surface doping. Our results establish Na3Bi as a model system for 3D TDSs, which can serve as an ideal platform for the systematic study of quantum phase transitions between rich topological quantum states.
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