Chalcogenide Phase Change Material for Active Terahertz Photonics
Advanced Materials Wiley 31:12 (2019) e1808157
Erratum: Corrigendum: Robust resistive memory devices using solution-processable metal-coordinated azo aromatics
Nature Materials Springer Nature 17:1 (2018) 103-103
Robust resistive memory devices using solution-processable metal-coordinated azo aromatics
Nature Materials Springer Nature 16:12 (2017) 1216-1224
Pressure dependence of resistivity and magnetoresistance in Pr-doped La0.7Ca0.3MnO3
Journal of Applied Physics AIP Publishing 113:17 (2013) 17d721