Scalable processing for realizing 21.7%-efficient all-perovskite tandem solar modules.
Science (New York, N.Y.) 376:6594 (2022) 762-767
Abstract:Challenges in fabricating all-perovskite tandem solar cells as modules rather than as single-junction configurations include growing high-quality wide-bandgap perovskites and mitigating irreversible degradation caused by halide and metal interdiffusion at the interconnecting contacts. We demonstrate efficient all-perovskite tandem solar modules using scalable fabrication techniques. By systematically tuning the cesium ratio of a methylammonium-free 1.8-electron volt mixed-halide perovskite, we improve the homogeneity of crystallization for blade-coated films over large areas. An electrically conductive conformal "diffusion barrier" is introduced between interconnecting subcells to improve the power conversion efficiency (PCE) and stability of all-perovskite tandem solar modules. Our tandem modules achieve a certified PCE of 21.7% with an aperture area of 20 square centimeters and retain 75% of their initial efficiency after 500 hours of continuous operation under simulated 1-sun illumination.
Attainment of low subthreshold slope in planar inversion-channel InGaAs MOSFET with in situ deposited Al
2O 3/Y 2O 3as a gate dielectric
Japanese Journal of Applied Physics 61:SC (2022)
Abstract:We have demonstrated a record low 85 mV dec-1 subthreshold slope (SS) at 300 K among the planar inversion-channel InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs). Our MOSFETs using in situ deposited Al2O3/Y2O3 as a gate dielectric were fabricated with a self-aligned inversion-channel gate-first process. The temperature-dependent transfer characteristics showed a linear reduction of SS versus temperature, with the attainment of an SS of 22 mV dec-1 at 77 K; the value is comparable to that of the state-of-the-art InGaAs FinFET. The slope factor of SS with temperature (m) is 1.33, which is lower than those reported in the planar InGaAs MOSFETs.
Insights into the charge carrier dynamics in perovskite/Si tandem solar cells using transient photocurrent spectroscopy
APPLIED PHYSICS LETTERS 120:17 (2022) ARTN 173504
Understanding and suppressing non-radiative losses in methylammonium-free wide-bandgap perovskite solar cells
Energy and Environmental Science Royal Society of Chemistry (2021)
Abstract:With power conversion efficiencies of perovskite-on-silicon and all-perovskite tandem solar cells increasing at rapid pace, wide bandgap (> 1.7 eV) metal-halide perovskites (MHPs) are becoming a major focus of academic and industrial photovoltaic research. Compared to their lower bandgap (< 1.6 eV) counterparts, these types of perovskites suffer from higher levels of non-radiative losses in both the bulk material and in device configurations, constraining their efficiencies far below their thermodynamic potential. In this work, we investigate the energy losses in methylammonium (MA) free high-Br-content widegap perovskites by using a combination of THz spectroscopy, steady-state and time-resolved photoluminescence, coupled with drift-diffusion simulations. The investigation of this system allows us to study charge-carrier recombination in these materials and devices in the absence of halide segregation due to the photostabilty of formamidinium-cesium based lead halide perovskites. We find that these perovskites are characterised by large non-radiative recombination losses in the bulk material and that the interfaces with transport layers in solar cell devices strongly limit their open-circuit voltage. In particular, we discover that the interface with the hole transport layer performs particularly poorly, in contrast to 1.6 eV bandgap MHPs which are generally limited by the interface with the electron-transport layer. To overcome these losses, we incorporate and investigate the recombination mechanisms present with perovskites treated with the ionic additive 1-butyl-1-methylpipiderinium tetrafluoroborate. We find that this additive not only improves the radiative efficiency of the bulk perovskite, but also reduces the non-radiative recombination at both the hole and electron transport layer interfaces of full photovoltaic devices. In addition to unravelling the beneficial effect of this specific treatment, we further optimise our solar cells by introducing an additional LiF interface treatment at the electron transport layer interface. Together these treatments enable MA-free 1.79 eV bandgap perovskite solar cells with open-circuit voltages of 1.22 V and power conversion efficiencies approaching 17 %, which is among the highest reported for this material system.
A tri-channel oxide transistor concept for the rapid detection of biomolecules including the SARS-CoV-2 spike protein
Advanced Materials Wiley (2021) 2104608