Prof Yen-Hung Lin: Publications

High electron mobility thin-film transistors based on Ga2O3 grown by atmospheric ultrasonic spray pyrolysis at low temperatures

Applied Physics Letters AIP Publishing 105:9 (2014) 092105

Authors:

Stuart R Thomas, George Adamopoulos, Yen-Hung Lin, Hendrik Faber, Labrini Sygellou, Emmanuel Stratakis, Nikos Pliatsikas, Panos A Patsalas, Thomas D Anthopoulos

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In situ photo-induced chemical doping of solution-processed graphene oxide for electronic applications

Journal of Materials Chemistry C Royal Society of Chemistry (RSC) 2:29 (2014) 5931-5937

Authors:

K Savva, Y-H Lin, C Petridis, E Kymakis, TD Anthopoulos, E Stratakis

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Correction: High‐Performance ZnO Transistors Processed Via an Aqueous Carbon‐Free Metal Oxide Precursor Route at Temperatures Between 80–180 °C

Advanced Materials Wiley 25:34 (2013) 4689-4689

Authors:

Yen‐Hung Lin, Hendrik Faber, Kui Zhao, Qingxiao Wang, Aram Amassian, Martyn McLachlan, Thomas D Anthopoulos

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High‐Performance ZnO Transistors Processed Via an Aqueous Carbon‐Free Metal Oxide Precursor Route at Temperatures Between 80–180 °C

Advanced Materials Wiley 25:31 (2013) 4340-4346

Authors:

Yen‐Hung Lin, Hendrik Faber, Kui Zhao, Qingxiao Wang, Aram Amassian, Martyn McLachlan, Thomas D Anthopoulos

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Solution-processed ZnO nanoparticle-based transistors via a room-temperature photochemical conversion process

Applied Physics Letters AIP Publishing 102:19 (2013) 193516

Authors:

Yen-Hung Lin, Hendrik Faber, Stephan Rossbauer, Thomas D Anthopoulos

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Prof Yen-Hung Lin

Sub department

High electron mobility thin-film transistors based on Ga2O3 grown by atmospheric ultrasonic spray pyrolysis at low temperatures

Authors:

In situ photo-induced chemical doping of solution-processed graphene oxide for electronic applications

Authors:

Correction: High‐Performance ZnO Transistors Processed Via an Aqueous Carbon‐Free Metal Oxide Precursor Route at Temperatures Between 80–180 °C

Authors:

High‐Performance ZnO Transistors Processed Via an Aqueous Carbon‐Free Metal Oxide Precursor Route at Temperatures Between 80–180 °C

Authors:

Solution-processed ZnO nanoparticle-based transistors via a room-temperature photochemical conversion process

Authors:

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