Long-range charge carrier mobility in metal halide perovskite thin-films and single crystals via transient photo-conductivity
Nature Communications Springer Nature 13:1 (2022) 4201
Abstract:
Charge carrier mobility is a fundamental property of semiconductor materials that governs many electronic device characteristics. For metal halide perovskites, a wide range of charge carrier mobilities have been reported using different techniques. Mobilities are often estimated via transient methods assuming an initial charge carrier population after pulsed photoexcitation and measurement of photoconductivity via non-contact or contact techniques. For nanosecond to millisecond transient methods, early-time recombination and exciton-to-free-carrier ratio hinder accurate determination of free-carrier population after photoexcitation. By considering both effects, we estimate long-range charge carrier mobilities over a wide range of photoexcitation densities via transient photoconductivity measurements. We determine long-range mobilities for FA0.83Cs0.17Pb(I0.9Br0.1)3, (FA0.83MA0.17)0.95Cs0.05Pb(I0.9Br0.1)3 and CH3NH3PbI3-xClx polycrystalline films in the range of 0.3 to 6.7 cm2 V−1 s−1. We demonstrate how our data-processing technique can also reveal more precise mobility estimates from non-contact time-resolved microwave conductivity measurements. Importantly, our results indicate that the processing of polycrystalline films significantly affects their long-range mobility.Visualizing macroscopic inhomogeneities in perovskite solar cells
ACS Energy Letters American Chemical Society 7:7 (2022) 2311-2322
Abstract:
Despite the incredible progress made, the highest efficiency perovskite solar cells are still restricted to small areas (<1 cm2). In large part, this stems from a poor understanding of the widespread spatial heterogeneity in devices. Conventional techniques to assess heterogeneities can be time consuming, operate only at microscopic length scales, and demand specialized equipment. We overcome these limitations by using luminescence imaging to reveal large, millimeter-scale heterogeneities in the inferred electronic properties. We determine spatially resolved maps of “charge collection quality”, measured using the ratio of photoluminescence intensity at open and short circuit. We apply these methods to quantify the inhomogeneities introduced by a wide range of transport layers, thereby ranking them by suitability for upscaling. We reveal that top-contacting transport layers are the dominant source of heterogeneity in the multilayer material stack. We suggest that this methodology can be used to accelerate the development of highly efficient, large-area modules, especially through high-throughput experimentation.Emissive Charge‐Transfer States at Hybrid Inorganic/Organic Heterojunctions Enable Low Non‐Radiative Recombination and High‐Performance Photodetectors
Advanced Materials Wiley 34:22 (2022) e2104654
Scalable processing for realizing 21.7%-efficient all-perovskite tandem solar modules
Science American Association for the Advancement of Science 376:6594 (2022) 762-767
Abstract:
Challenges in fabricating all-perovskite tandem solar cells as modules rather than as single-junction configurations include growing high-quality wide-bandgap perovskites and mitigating irreversible degradation caused by halide and metal interdiffusion at the interconnecting contacts. We demonstrate efficient all-perovskite tandem solar modules using scalable fabrication techniques. By systematically tuning the cesium ratio of a methylammonium-free 1.8–electron volt mixed-halide perovskite, we improve the homogeneity of crystallization for blade-coated films over large areas. An electrically conductive conformal “diffusion barrier” is introduced between interconnecting subcells to improve the power conversion efficiency (PCE) and stability of all-perovskite tandem solar modules. Our tandem modules achieve a certified PCE of 21.7% with an aperture area of 20 square centimeters and retain 75% of their initial efficiency after 500 hours of continuous operation under simulated 1-sun illumination.Attainment of low subthreshold slope in planar inversion-channel InGaAs MOSFET with in situ deposited Al2O3/Y2O3 as a gate dielectric
Japanese Journal of Applied Physics IOP Publishing 61:SC (2022) sc1018