Correction: High‐Performance ZnO Transistors Processed Via an Aqueous Carbon‐Free Metal Oxide Precursor Route at Temperatures Between 80–180 °C
Advanced Materials Wiley 25:34 (2013) 4689-4689
High‐Performance ZnO Transistors Processed Via an Aqueous Carbon‐Free Metal Oxide Precursor Route at Temperatures Between 80–180 °C
Advanced Materials Wiley 25:31 (2013) 4340-4346
Solution-processed ZnO nanoparticle-based transistors via a room-temperature photochemical conversion process
Applied Physics Letters AIP Publishing 102:19 (2013) 193516
Post-fabrication, in situ laser reduction of graphene oxide devices
Applied Physics Letters AIP Publishing 102:9 (2013) 093115
Solution-processable organic dielectrics for graphene electronics
Nanotechnology IOP Publishing 23:34 (2012) 344017