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CMP
Credit: Jack Hobhouse

Prof Yen-Hung Lin

Long Term Visitor

Sub department

  • Condensed Matter Physics
yen-hung.lin@physics.ox.ac.uk
Telephone: 01865 (2)82328
Robert Hooke Building, room G26
  • About
  • Publications

Electron mobility enhancement in solution-processed low-voltage In2O3 transistorsvia channel interface planarization

AIP ADVANCES 8:6 (2018) ARTN 065015

Authors:

Alexander D Mottram, Pichaya Pattanasattayavong, Ivan Isakov, Gwen Wyatt-Moon, Hendrik Faber, Yen-Hung Lin, Thomas D Anthopoulos
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Low-voltage solution-processed hybrid light-emitting transistors

ACS Applied Materials and Interfaces American Chemical Society 10:22 (2018) 18445-18449

Authors:

MU Chaudhry, K Tetzner, Yen-Hung Lin, Sungho Nam, C Pearson, C Groves, MC Petty, TD Anthopoulos, Donal Bradley

Abstract:

We report the development of low operating voltages in inorganic–organic hybrid light-emitting transistors (HLETs) based on a solution-processed ZrOx gate dielectric and a hybrid multilayer channel consisting of the heterojunction In2O3/ZnO and the organic polymer “Super Yellow” acting as n- and p-channel/emissive layers, respectively. Resulting HLETs operate at the lowest voltages reported to-date (<10 V) and combine high electron mobility (22 cm2/(V s)) with appreciable current on/off ratios (≈103) and an external quantum efficiency of 2 × 10–2% at 700 cd/m2. The charge injection, transport, and recombination mechanisms within this HLET architecture are discussed, and prospects for further performance enhancement are considered.
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Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors

npj Flexible Electronics Springer Nature 2:1 (2018) 11

Authors:

Yang Han, Zhuping Fei, Yen-Hung Lin, Jaime Martin, Floriana Tuna, Thomas D Anthopoulos, Martin Heeney
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High Speed Ultraviolet Phototransistors Based on an Ambipolar Fullerene Derivative

ACS Applied Materials & Interfaces American Chemical Society (ACS) 10:12 (2018) 10202-10210

Authors:

Wentao Huang, Yen-Hung Lin, Thomas D Anthopoulos
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High-efficiency fullerene solar cells enabled by a spontaneously formed mesostructured CuSCN-nanowire heterointerface

Advanced Science Wiley 5:4 (2018) 1700980

Authors:

WY Sit, FD Eisner, YH Lin, Y Firdaus, A Seitkhan, AH Balawi, F Laquai, CH Burgess, MA Mclachlan, Georgios M Volonakis, Feliciano Giustino, TD Anthopoulos

Abstract:

Fullerenes and their derivatives are widely used as electron acceptors in bulk-heterojunction organic solar cells as they combine high electron mobility with good solubility and miscibility with relevant semiconducting polymers. However, studies on the use of fullerenes as the sole photogeneration and charge-carrier material are scarce. Here, a new type of solution-processed small-molecule solar cell based on the two most commonly used methanofullerenes, namely [6,6]-phenyl-C61-butyric acid methyl ester (PC 60 BM) and [6,6]-phenyl-C71-butyric acid methyl ester (PC 70 BM), as the light absorbing materials, is reported. First, it is shown that both fullerene derivatives exhibit excellent ambipolar charge transport with balanced hole and electron mobilities. When the two derivatives are spin-coated over the wide bandgap p-type semiconductor copper (I) thiocyanate (CuSCN), cells with power conversion efficiency (PCE) of ≈1%, are obtained. Blending the CuSCN with PC 70 BM is shown to increase the performance further yielding cells with an open-circuit voltage of ≈0.93 V and a PCE of 5.4%. Microstructural analysis reveals that the key to this success is the spontaneous formation of a unique mesostructured p-n-like heterointerface between CuSCN and PC 70 BM. The findings pave the way to an exciting new class of single photoactive material based solar cells.
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