High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices
Advanced Science Wiley 2:7 (2015) 1500058
Signatures of Quantized Energy States in Solution‐Processed Ultrathin Layers of Metal‐Oxide Semiconductors and Their Devices
Advanced Functional Materials Wiley 25:11 (2015) 1727-1736
Indium Oxide Thin-Film Transistors Processed at Low Temperature via Ultrasonic Spray Pyrolysis
ACS Applied Materials & Interfaces American Chemical Society (ACS) 7:1 (2015) 782-790
Exploring low-dimensional charge transport phenomena in solution-processed metal oxide superlattice transistors
Proceedings of the International Display Workshops 3 (2015) 1736-1739
Abstract:
We report on metal oxide superlattice systems grown from solution and their use in high electron mobility transistors. On the basis of temperature-dependent electron transport measurements and carrier distribution evaluation, we argue that the enhanced performance arises from the presence of 2-dimensional electron gaslike systems formed at the oxide-oxide heterointerfaces.Exploring low-dimensional charge transport phenomena in solution-processed metal oxide superlattice transistors
Proceedings of the International Display Workshops 1 (2015) 301-304