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CMP
Credit: Jack Hobhouse

Prof Yen-Hung Lin

Long Term Visitor

Sub department

  • Condensed Matter Physics
yen-hung.lin@physics.ox.ac.uk
Telephone: 01865 (2)82328
Robert Hooke Building, room G26
  • About
  • Publications

Exploring low-dimensional charge transport phenomena in solution-processed metal oxide superlattice transistors

Proceedings of the International Display Workshops 3 (2015) 1736-1739

Authors:

YH Lin, K Zhao, R Li, A Amassian, TD Anthopoulos

Abstract:

We report on metal oxide superlattice systems grown from solution and their use in high electron mobility transistors. On the basis of temperature-dependent electron transport measurements and carrier distribution evaluation, we argue that the enhanced performance arises from the presence of 2-dimensional electron gaslike systems formed at the oxide-oxide heterointerfaces.

Exploring low-dimensional charge transport phenomena in solution-processed metal oxide superlattice transistors

Proceedings of the International Display Workshops 1 (2015) 301-304

Authors:

YH Lin, K Zhao, R Li, A Amassian, TD Anthopoulos

Abstract:

We report on metal oxide superiattice systems grown from solution and their use in high electron mobility transistors. On the basis of temperature-dependent electron transport measurements and carrier distribution evaluation, we argue that the enhanced performance arises from the presence of 2-dimensional electron gas-like systems formed at the oxide-oxide heterointerfaces.

High electron mobility thin-film transistors based on Ga2O3 grown by atmospheric ultrasonic spray pyrolysis at low temperatures

Applied Physics Letters AIP Publishing 105:9 (2014) 092105

Authors:

Stuart R Thomas, George Adamopoulos, Yen-Hung Lin, Hendrik Faber, Labrini Sygellou, Emmanuel Stratakis, Nikos Pliatsikas, Panos A Patsalas, Thomas D Anthopoulos
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In situ photo-induced chemical doping of solution-processed graphene oxide for electronic applications

Journal of Materials Chemistry C Royal Society of Chemistry (RSC) 2:29 (2014) 5931-5937

Authors:

K Savva, Y-H Lin, C Petridis, E Kymakis, TD Anthopoulos, E Stratakis
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Correction: High‐Performance ZnO Transistors Processed Via an Aqueous Carbon‐Free Metal Oxide Precursor Route at Temperatures Between 80–180 °C

Advanced Materials Wiley 25:34 (2013) 4689-4689

Authors:

Yen‐Hung Lin, Hendrik Faber, Kui Zhao, Qingxiao Wang, Aram Amassian, Martyn McLachlan, Thomas D Anthopoulos
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