Nondestructive Method for Mapping Metal Contact Diffusion in In2O3 Thin-Film Transistors
ACS Applied Materials & Interfaces American Chemical Society (ACS) 8:38 (2016) 25631-25636
Al‐Doped ZnO Transistors Processed from Solution at 120 °C
Advanced Electronic Materials Wiley 2:6 (2016)
Hybrid Modulation‐Doping of Solution‐Processed Ultrathin Layers of ZnO Using Molecular Dopants
Advanced Materials Wiley 28:20 (2016) 3952-3959
Energy Quantization in Solution‐Processed Layers of Indium Oxide and Their Application in Resonant Tunneling Diodes
Advanced Functional Materials Wiley 26:10 (2016) 1656-1663
Quasi Two-Dimensional Dye-Sensitized In2O3 Phototransistors for Ultrahigh Responsivity and Photosensitivity Photodetector Applications
ACS Applied Materials & Interfaces American Chemical Society (ACS) 8:7 (2016) 4894-4902