Revealing ultrafast charge-carrier thermalization in tin-iodide perovskites through novel pump-push-probe terahertz spectroscopy

ACS Photonics American Chemical Society 8:8 (2021) 2509-2518

Authors:

Henry Snaith, Michael Johnson, Aleksander Ulatowski, Laura Herz

Abstract:

Tin-iodide perovskites are an important group of semiconductors for photovoltaic applications, promising higher intrinsic charge-carrier mobilities and lower toxicity than their lead-based counterparts. Controllable tin vacancy formation and the ensuing hole doping provide interesting opportunities to investigate dynamic intraband transitions of charge carriers in these materials. Here, we present for the first time an experimental implementation of a novel Optical-Pump–IR-Push–THz-Probe spectroscopic technique and demonstrate its suitability to investigate the intraband relaxation dynamics of charge carriers brought into non-equilibrium by an infrared “push” pulse. We observe a push-induced decrease of terahertz conductivity for both chemically- and photodoped FA0.83Cs0.17SnI3 thin films and show that these effects derive from stimulated THz emission. We use this technique to reveal that newly photogenerated charge carriers relax within the bands of FA0.83Cs0.17SnI3 on a sub-picosecond timescale when a large, already fully thermalized (cold) population of charge-carriers is present. Such rapid dissipation of the initial charge-carrier energy suggests that the propensity of tin halide perovskites towards unintentional self-doping resulting from tin vacancy formation makes these materials less suited to implementation in hot-carrier solar cells than their lead-based counterparts.

The atomic-scale microstructure of metal halide perovskite elucidated via low-dose electron microscopy

Microscopy and Microanalysis Oxford University Press (OUP) 27:S1 (2021) 966-968

Authors:

Mathias Rothmann, Judy kim, Juliane Borchert, Kilian Lohmann, Colum O'Leary, Alex Sheader, Laura Clark, Henry Snaith, Michael Johnston, Peter Nellist, Laura Herz

Understanding the perovskite/self-assembled selective contact interface for ultra-stable and highly efficient p–i–n perovskite solar cells

Energy & Environmental Science Royal Society of Chemistry (RSC) 14:7 (2021) 3976-3985

Authors:

Ece Aktas, Nga Phung, Hans Köbler, Dora A González, Maria Méndez, Ivona Kafedjiska, Silver-Hamill Turren-Cruz, Robert Wenisch, Iver Lauermann, Antonio Abate, Emilio Palomares

One-Step Synthesis of SnI2·(DMSO)x Adducts for High-Performance Tin Perovskite Solar Cells.

Journal of the American Chemical Society 143:29 (2021) 10970-10976

Authors:

Xianyuan Jiang, Hansheng Li, Qilin Zhou, Qi Wei, Mingyang Wei, Luozhen Jiang, Zhen Wang, Zijian Peng, Fei Wang, Zihao Zang, Kaimin Xu, Yi Hou, Sam Teale, Wenjia Zhou, Rui Si, Xingyu Gao, Edward H Sargent, Zhijun Ning

Abstract:

Contemporary thin-film photovoltaic (PV) materials contain elements that are scarce (CIGS) or regulated (CdTe and lead-based perovskites), a fact that may limit the widespread impact of these emerging PV technologies. Tin halide perovskites utilize materials less stringently regulated than the lead (Pb) employed in mainstream perovskite solar cells; however, even today's best tin-halide perovskite thin films suffer from limited carrier diffusion length and poor film morphology. We devised a synthetic route to enable in situ reaction between metallic Sn and I2 in dimethyl sulfoxide (DMSO), a reaction that generates a highly coordinated SnI2·(DMSO)x adduct that is well-dispersed in the precursor solution. The adduct directs out-of-plane crystal orientation and achieves a more homogeneous structure in polycrystalline perovskite thin films. This approach improves the electron diffusion length of tin-halide perovskite to 290 ± 20 nm compared to 210 ± 20 nm in reference films. We fabricate tin-halide perovskite solar cells with a power conversion efficiency of 14.6% as certified in an independent lab. This represents a ∼20% increase compared to the previous best-performing certified tin-halide perovskite solar cells. The cells outperform prior earth-abundant and heavy-metal-free inorganic-active-layer-based thin-film solar cells such as those based on amorphous silicon, Cu2ZnSn(S/Se)4 , and Sb2(S/Se)3.

Balanced Charge Carrier Transport Mediated by Quantum Dot Film Post-organization for Light-Emitting Diode Applications.

ACS applied materials & interfaces 13:22 (2021) 26170-26179

Authors:

Yuljae Cho, Jongchul Lim, Meng Li, Sangyeon Pak, Zhao-Kui Wang, Ying-Guo Yang, Antonio Abate, Zhe Li, Henry J Snaith, Bo Hou, SeungNam Cha

Abstract:

In light-emitting diodes (LEDs), balanced electron and hole transport is of particular importance to achieve high rates of radiative recombination. Most quantum dot (QD)-based LEDs, however, employ infinitesimal core-shell QDs which inherently have different electron and hole mobilities. As QDs are the core building blocks of QD-LEDs, the inherent mobility difference in the core-shell QDs causes significantly unbalanced charge carrier transport, resulting in detrimental effects on performances of QD-LEDs. Herein, we introduce a post-chemical treatment to reconstruct the QD films through the solvent-mediated self-organization process. The treatment using various poly-alkyl alcohol groups enables QD ensembles to transform from disordered solid dispersion into an ordered superlattice and effectively modulate electron and hole mobilities, which leads to the balanced charge carrier transport. In particular, ethanol-treated QD films exhibit enhanced charge carrier lifetime and reduced hysteresis due to the balanced charge carrier transport, which is attributed to the preferential-facet-oriented QD post-organization. As a result, 63, 78, and 54% enhancements in the external quantum efficiency were observed in red, green, and blue QD-LEDs, respectively. These results are of fundamental importance to understand both solvent-mediated QD film reconstruction and the effect of balanced electron and hole transport in QD-LEDs.