Snaith group

Abstract:

Perovskite nanocrystal light-emitting devices (PNC LEDs) exhibit great potential in display and lighting applications. Balanced hole and electron injection in the light-emitting layer is undoubtedly an effective way to improve LED performance. Here, bismuth (Bi) was introduced into PNC LEDs to form a silver-bismuth (Ag-Bi) bilayer anode. Ag diffused into a defective 2 nm thick Bi layer to form an alloy-like state that promoted hole injection, reduced the charge transfer resistance, and enhanced charge transfer, leading to more balanced hole-electron carriers in the emission layer through hole injection enhancement. As a result, the turn-on voltage and brightness changed from 2.41 V and 2200 cd m^-2, respectively, for CsPb_1-xZn_xI₃-based LEDs with a Ag monolayer anode to 2.2 V and 3714 cd m^-2, respectively, for devices with a Ag-Bi bilayer anode. In addition, the performance of CsPbI₃ and CsPbBrI₂ PNC-based LEDs has also been effectively improved by using a Ag-Bi bilayer anode.