Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission
Physical Review B - Condensed Matter and Materials Physics 70:23 (2004) 1-6
Abstract:
We have studied terahertz (THz) emission from arsenic-ion implanted GaAs both experimentally and using a three-dimensional carrier dynamics simulation. A uniform density of vacancies was formed over the optical absorption depth of bulk GaAs samples by performing multienergy implantations of arsenic ions (1 and 2.4 MeV) and subsequent thermal annealing. In a series of THz emission experiments the frequency of peak THz power was found to increase significantly from 1.4 to 2.2 THz when the ion implantation dose was increased from 10 13 to 1016 cm-3. We used a semiclassical Monte Carlo simulation of ultrafast carrier dynamics to reproduce and explain these results. The effect of the ion-induced damage was included in the simulation by considering carrier scattering at neutral and charged impurities, as well as carrier trapping at defect sites. Higher vacancy concentrations and shorter carrier trapping times both contributed to shorter simulated THz pulses, the latter being more important over experimentally realistic parameter ranges.Simulation and optimization of arsenic-implanted THz emitters
(2004) 577-578
Abstract:
We have used a three-dimensional pseudo-classical Monte Carlo simulation to investigate the effects of As+ ion-implantation on pulsed terahertz radiation emitters. Devices based on surface-field emitters and photoconductive switches have been modelled. Two implantations of As+ ions at 1.0 MeV and 2.4 MeV were found to produce a uniform distribution of vacancies over the volume of GaAs contributing to THz generation in these devices. We calculate that ionimplantation increases the THz bandwidth of the devices with the cost of decreasing the spectral intensity at lower THz frequencies.Selective dielectrophoretic manipulation of surface-immobilized DNA molecules
Nanotechnology 14:8 (2003) 896-902
Abstract:
The fabrication of nanoscale molecular devices is becoming increasingly important and research into their fabrication has intensified over the last few years. In particular, the attachment of molecular objects onto various surfaces has attracted considerable attention. Here, we report a multistep surface immobilization procedure, which allows the specific and controlled attachment of very long DNA molecules onto gold electrodes. Further, we report the effect of dielectrophoresis on these surface-bound DNA molecules with respect to amplitude and frequency, and we show that selected surface-immobilized DNA molecules can be manipulated by dielectrophoresis. Finally, we investigated the use of dielectrophoresis in conjunction with the multistep surface immobilization of fluorescently labelled, surface-bound γ-DNA in a basic data-storage device.Low-energy vibrational modes in phenylene oligomers studied by THz time domain spectroscopy
Chemical Physics Letters 377 (2003) 256-262
The development of terahertz sources and their applications.
Phys Med Biol 47:21 (2002) 3679-3689