High irradiance performance of metal halide perovskites for concentrator photovoltaics
Nature Energy Nature Publishing Group 3 (2018) 855-861
Abstract:
Traditionally, III–V multi-junction cells have been used in concentrator photovoltaic (CPV) applications, which deliver extremely high efficiencies but have failed to compete with ‘flat-plate’ silicon technologies owing to cost. Here, we assess the feasibility of using metal halide perovskites for CPVs, and we evaluate their device performance and stability under concentrated light. Under simulated sunlight, we achieve a peak efficiency of 23.6% under 14 Suns (that is, 14 times the standard solar irradiance), as compared to 21.1% under 1 Sun, and measure 1.26 V open-circuit voltage under 53 Suns, for a material with a bandgap of 1.63 eV. Importantly, our encapsulated devices maintain over 90% of their original efficiency after 150 h aging under 10 Suns at maximum power point. Our work reveals the potential of perovskite CPVs, and may lead to new PV deployment strategies combining perovskites with low-concentration factor and lower-accuracy solar tracking systems.p‐Doping of Copper(I) Thiocyanate (CuSCN) Hole‐Transport Layers for High‐Performance Transistors and Organic Solar Cells
Advanced Functional Materials Wiley 28:31 (2018)
Nanocrystalline silicon oxide interlayer in monolithic perovskite/silicon heterojunction tandem solar cells with total current density >39 mA/cm2
Institute of Electrical and Electronics Engineers (IEEE) 00 (2018) 2627-2630
Electron mobility enhancement in solution-processed low-voltage In2O3 transistorsvia channel interface planarization
AIP ADVANCES 8:6 (2018) ARTN 065015
Low-voltage solution-processed hybrid light-emitting transistors
ACS Applied Materials and Interfaces American Chemical Society 10:22 (2018) 18445-18449