High electron mobility thin-film transistors based on Ga2O3 grown by atmospheric ultrasonic spray pyrolysis at low temperatures
Applied Physics Letters AIP Publishing 105:9 (2014) 092105
In situ photo-induced chemical doping of solution-processed graphene oxide for electronic applications
Journal of Materials Chemistry C Royal Society of Chemistry (RSC) 2:29 (2014) 5931-5937
Correction: High‐Performance ZnO Transistors Processed Via an Aqueous Carbon‐Free Metal Oxide Precursor Route at Temperatures Between 80–180 °C
Advanced Materials Wiley 25:34 (2013) 4689-4689
High-performance ZnO transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °C.
Advanced materials (Deerfield Beach, Fla.) 25:31 (2013) 4340-4346
Abstract:
An aqueous and carbon-free metal-oxide precursor route is used in combination with a UV irradiation-assisted low-temperature conversion method to fabricate low-voltage ZnO transistors with electron mobilities exceeding 10 cm(2) /Vs at temperatures <180 °C. Because of its low temperature requirements the method allows processing of high-performance transistors onto temperature sensitive substrates such as plastic.Solution-processed ZnO nanoparticle-based transistors via a room-temperature photochemical conversion process
Applied Physics Letters AIP Publishing 102:19 (2013) 193516