Prof Yen-Hung Lin

Abstract:

Metal oxide thin-film transistors are increasingly used in the driving backplanes of organic light-emitting diode displays. Commercial devices currently rely on metal oxides processed via physical vapour deposition methods, but the use of solution-based processes could provide a simpler, higher-throughput approach that would be more cost effective. However, creating oxide transistors with high carrier mobility and bias-stable operation using such processes has proved challenging. Here we show that transistors with high electron mobility (50 cm2 V−1 s−1) and operational stability can be fabricated from solution-processed multilayer channels composed of ultrathin layers of indium oxide, zinc oxide nanoparticles, ozone-treated polystyrene and compact zinc oxide. Insertion of the ozone-treated polystyrene interlayer passivates electron traps in the channel and reduces bias-induced instability during continuous transistor operation over a period of 24 h and under a high electric-field flux density (2.1 × 10−6 C cm−2). Furthermore, incorporation of the pre-synthesized aluminium-doped zinc oxide nanoparticles enables controlled n-type doping of the hybrid channels, providing additional control over the operating characteristics of the transistors.

Abstract:

Metal halide perovskites have demonstrated extraordinary potential as materials for next-generation optoelectronics including photovoltaics and light-emitting diodes. Nevertheless, our understanding of this material is still far from complete. One remaining puzzle is the phenomenon of perovskite “photo-brightening”: the increase in photoluminescence during exposure to light in an ambient atmosphere. Here, we propose a comprehensive mechanism for the reactivity of the archetypal perovskite, MAPbI3, in ambient conditions. We establish the formation of lead-oxygen bonds by hydrogen peroxide as the key factor leading to perovskite photo-brightening. We demonstrate that hydrogen peroxide can be applied directly as an effective “post-treatment” to emulate the process and substantially improve photoluminescence quantum efficiencies. Finally, we show that the treatment can be incorporated into photovoltaic devices to give a 50 mV increase in open-circuit voltage, delivering high 19.2% steady-state power conversion efficiencies for inverted perovskite solar cells of the mixed halide, mixed cation perovskite FA0.83Cs0.17Pb(I0.9Br0.1)3.

Abstract:

A crosslinkable acrylate random copolymer with both hole-transporting bis(triarylamine) and photocrosslinkable cinnamate side chains is compared to the widely used poly(4-butyl-triphenylamine-4′,4′′-diyl) (PolyTPD) as a hole-transport material (HTM) in positive–intrinsic–negative (p–i–n) perovskite solar cells (PSCs). The crosslinked films of this HTM exhibit improved wettability by precursor solutions of the perovskite relative to PolyTPD; this facilitates high-quality full film coverage by the subsequently deposited perovskite layer on smooth substrates, which is difficult to achieve with PolyTPD without the use of additional interlayers. PSCs fabricated using undoped and crosslinked copolymer achieve steady-state power outputs that are comparable to those of cells incorporating p-doped PolyTPD (with interlayers) as the HTM. The devices made with this material also exhibited improved initial stability under high-intensity ultraviolet LED irradiation, in comparison to those with the PolyTPD analogue. Remarkably, after 3000 h of aging in an oven at 85 °C in a nitrogen-filled glovebox, device efficiency showed no degradation; the SPO was comparable to the initial performance.