Snaith group

Abstract:

Formamidinium lead trioiodide (FAPbI₃) is a promising perovskite for single-junction solar cells. However, FAPbI₃ is metastable at room temperature and can cause intrinsic quantum confinement effects apparent through a series of above-bandgap absorption peaks. Here, we explore three common solution-based film-fabrication methods, neat N,N-dimethylformamide (DMF)–dimethyl sulfoxide (DMSO) solvent, DMF-DMSO with methylammonium chloride, and a sequential deposition approach. The latter two offer enhanced nucleation and crystallization control and suppress such quantum confinement effects. We show that elimination of these absorption features yields increased power conversion efficiencies (PCEs) and short-circuit currents, suggesting that quantum confinement hinders charge extraction. A meta-analysis of literature reports, covering 244 articles and 825 photovoltaic devices incorporating FAPbI₃ films corroborates our findings, indicating that PCEs rarely exceed a 20% threshold when such absorption features are present. Accordingly, ensuring the absence of these absorption features should be the first assessment when designing fabrication approaches for high-efficiency FAPbI₃ solar cells.

Abstract:

Developing an efficient electron transport layer (ETL) through structural modification is essential to produce high-performance perovskite solar cell (PSC) devices. Specifically, the ETL should exhibit low defects, high optical transparency, and charge selectivity for ideal electron transport. Herein, we demonstrate (i) the low-temperature fabrication of tin oxide (SnO2) ETLs with a bilayer structure, and (ii) inkjet-printing of triple-cation perovskite films. Through the combined use of spin-coating and spray deposition, the optimized SnO2-bilayer ETL shows a nano-granule-textured surface, noticeably fewer defects, and a cascade conduction band position with the inkjet-printed perovskite film. The champion PSC device, based on the SnO2-bilayer ETL and inkjet-printed perovskite film, recorded an outstanding power conversion efficiency (PCE) of ∼16.9%, which is significantly higher than the device based on the conventional SnO2 ETL (PCE ∼14.8%). The improved photovoltaic performance of the SnO2-bilayer-based device arises mainly from more efficient charge transport and suppressed recombination at the ETL/perovskite interface. The SnO2-bilayer ETL and inkjet-printed perovskite films demonstrated herein can be potentially used for large-scale manufacturing of photovoltaic modules.