Roadmap on metal-halide perovskite semiconductors and devices
Abstract:
Metal-halide perovskites are emerging as promising semiconductors for next-generation (opto)electronics. Due to their excellent optoelectronic and physical properties, as well as their processing capabilities, the past decades have seen significant progress and success in various device applications, such as solar cells, photodetectors, light-emitting diodes, and transistors. Despite their performance now rivaling or surpassing that of silicon counterparts, halide-perovskite semiconductors still face challenges for commercialization, particularly in terms of toxicity, stability, reliability, reproducibility, and lifetime. In this Roadmap, we present comprehensive discussions and perspectives from leading experts in the perovskite research community, covering various perovskite (opto)electronics, fundamental material properties and fabrication methods, photophysical characterizations, computing science, device physics, and the current challenges in each field. We hope this article provides a valuable resource for researchers and fosters the development of halide perovskites from basic to applied science.In-situ molecular compensation in wide-bandgap perovskite for efficient all-perovskite tandem solar cells
Abstract:
Substantial VOC loss and halide segregation in wide-bandgap (WBG) perovskite sub-cells pose significant challenges for advancing all-perovskite tandem solar cells (APTSCs). Regarding this, one of the most impactful developments is the application of hole-selective self-assembled monolayers (SAMs), leading to the advancement in APTSC technology. However, SAMs with poor polar-solvent resistance would be inevitably delaminated from substrates during perovskite precursor coating, remaining great challenge in achieving a complete SAMs coverage with derivatization issues, e.g. defective perovskite and considerable interface energy loss. Here, we introduced an in-situ molecular compensation strategy to address the inherent flaw of SAMs within WBG perovskites via incorporating 5-ammonium valeric acid iodide (5-AVAI). The larger-dipole 5-AVAI spontaneously accumulates toward the buried interface to compensate the SAMs-deficient sites when depositing WBG perovskite, effectively minimizing interfacial energy loss. Simultaneously, amphoteric 5-AVAI with amino and carboxyl groups can compensate the defects at grain boundaries for solid passivation. Consequently, a champion efficiency of 20.23% with a record VOC of 1.376 V was realized on WBG devices, enabling an efficiency of 28.9% for the APTSCs. Encouragingly, the tandems showed good operational stability and retained 87.3% of their efficiency after 800 hours of tracking.