Snaith group

Abstract:

Abstract:

Vacuum deposition of metal halide perovskite is a scalable and adaptable method. In this study, we adopt sequential evaporation to form the perovskite layer and reveal how the relative humidity during the annealing step, impacts its crystallinity and the photoluminescence quantum yield (PLQY). By controlling the humidity, we achieved a significant enhancement of 50 times in PLQY from 0.12% to 6%. This improvement corresponds to an increase in implied open-circuit voltage (Voc) of over 100 meV. We investigate the origin of this enhanced PLQY by combining structural, chemical and spectroscopic methods. Our results show that annealing in a controlled humid environment improves the organic and inorganic halides' interdiffusion throughout the bulk, which in turn significantly reduces non-radiative recombination both in the bulk and at the interfaces with the charge transport layers, which enhanced both the attainable open-circuit voltage and the charge carrier diffusion length. We further demonstrate that the enhanced intermixing results in fully vacuum-deposited FA0.85Cs0.15Pb(IxCl1−x)3 p-i-n perovskite solar cells (PSCs) with a maximum power point tracked efficiency of 21.0% under simulated air mass (AM) 1.5G 100 mW cm−2 irradiance. Additionally, controlled humidity annealed PSCs exhibit superior stability when aged under full spectrum simulated solar illumination at 85 °C and in open-circuit conditions.

Abstract:

Metal-halide perovskite solar cells have achieved power conversion efficiencies comparable to those of silicon photovoltaic (PV) devices, approaching 27% for single-junction devices. The durability of the devices, however, lags far behind their performance. Their practical implementation implies the subjection of the material and devices to temperature cycles of varying intensity, driven by diurnal cycles or geographical characteristics. Thus, it is vital to develop devices that are resilient to temperature cycling. This Perspective analyses the behaviour of perovskite devices under temperature cycling. We discuss the crystallographic structural evolution of the perovskite layer, reactions and/or interactions among stacked layers, PV properties and photocatalysed thermal reactions. We highlight effective strategies for improving stability under temperature cycling, such as enhancing material crystallinity or relieving interlayer thermal stress using buffer layers. Additionally, we outline existing standards and protocols for temperature cycling testing and we propose a unified approach that could facilitate valuable cross-study comparisons among scientific and industrial research laboratories. Finally, we share our outlook on strategies to develop perovskite PV devices with exceptional real-world operating stability.

Abstract:

2D lead halide perovskites (2DPs) offer chemical compatibility with 3D perovskites and enhanced stability, which are attractive for applications in photovoltaic and light‐emitting devices. However, such lowered structural dimensionality causes increased excitonic effects and highly anisotropic charge‐carrier transport. Determining the diffusivity of excitations, in particular for out‐of‐plane or inter‐layer transport, is therefore crucial, yet challenging to achieve. Here, an effective method is demonstrated for monitoring inter‐layer diffusion of photoexcitations in (PEA)2PbI4 thin films by tracking time‐dependent changes in photoluminescence spectra induced by photon reabsorption effects. Selective photoexcitation from either substrate‐ or air‐side of the films reveals differences in diffusion dynamics encountered through the film profile. Time‐dependent diffusion coefficients are extracted from spectral dynamics through a 1D diffusion model coupled with an interference correction for refractive index variations arising from the strong excitonic resonance of 2DPs. Such analysis, together with structural probes, shows that minute misalignment of 2DPs planes occurs at distances far from the substrate, where efficient in‐plane transport consequently overshadows the less efficient out‐of‐plane transport in the direction perpendicular to the substrate. Through detailed analysis, a low out‐of‐plane excitation diffusion coefficient of (0.26 ± 0.03) ×10−4 cm2 s−1 is determined, consistent with a diffusion anisotropy of ≈4 orders of magnitude.

Abstract:

Doping with small densities of foreign ions is an essential strategy for tuning the optoelectronic properties of semiconductors, but the effects of doping are not well-understood in halide perovskites. We investigate the effect of Bi3+ and Sb3+ doping in lead–tin perovskites. Films doped with small amounts of BiI3 and SbI3 show greatly increased non-radiative recombination at precursor doping concentrations as low as 1 ppm for Bi3+ and 1000 ppm for Sb3+. We rationalize such behaviour by density functional theory (DFT) simulations, showing that these metal ions can be incorporated in the perovskite crystal by introducing deep trap levels in the band gap. Having found that very small amounts of Bi3+ greatly reduce the optoelectronic quality of lead–tin perovskite films, we investigate the presence of Bi impurities in perovskite precursor chemicals and find quantities approaching 1 ppm in some. In response, we introduce a facile method for removing Bi3+ impurities and demonstrate removal of 100 ppm Bi from a perovskite ink. This work demonstrates how the incorporation of small concentrations of foreign metal ions can severely affect film quality, raising the importance of precursor chemical purity.