Snaith group

Abstract:

Relative populations of the four energy-lowest IPR (isolated-pentagon-rule) isomers of Er@C82 under the high-temperature synthetic conditions are computed using the Gibbs energy based on characteristics from the density functional theory calculations (B3LYP/6-31+G*∼SDD energetics, B3LYP/6-31G*∼SDD entropy). Two leading isomers are predicted - Er@ (Formula presented.) -C82 and Er@ (Formula presented.) -C82. The calculated equilibrium isomeric relative populations agree with available observations. As Er@C82 is one of the metallofullerenes recently used as dopants for improvement of efficiency and stability of perovskite solar cells, the calculations should help in finding rules for further selections of fullerene endohedrals for such new applications in photovoltaics.

Abstract:

Demand for energy in the context of climate change is driving rapid deployment of low-cost renewable energy and is accelerating efforts to deliver advanced photovoltaic (PV) technologies. In the past decade, the steeply rising solar-to-electrical power conversion efficiency of metal-halide perovskite solar cells (PSCs) make them a compelling candidate for next-generation PVs, with interesting applications envisaged beyond traditional solar plants. These include building integrated PVs, flexible solar-powered electronics, and solar vehicles and aircraft. Metal-halide perovskites benefit from the low formation energy for crystallization, a consequence of their ionic nature, which enables close to ambient-temperature solution or vapor-phase deposition and a thin-film crystallization process. However, the ease by which rapid crystallization occurs also introduces defects and local heterogeneities throughout the perovskite films and at internal interfaces, which limits their efficiency (1).

Abstract:

The efficiency and longevity of metal-halide perovskite solar cells are typically dictated by nonradiative defect-mediated charge recombination. In this work, we demonstrate a vapor-based amino-silane passivation that reduces photovoltage deficits to around 100 millivolts (>90% of the thermodynamic limit) in perovskite solar cells of bandgaps between 1.6 and 1.8 electron volts, which is crucial for tandem applications. A primary-, secondary-, or tertiary-amino–silane alone negatively or barely affected perovskite crystallinity and charge transport, but amino-silanes that incorporate primary and secondary amines yield up to a 60-fold increase in photoluminescence quantum yield and preserve long-range conduction. Amino-silane–treated devices retained 95% power conversion efficiency for more than 1500 hours under full-spectrum sunlight at 85°C and open-circuit conditions in ambient air with a relative humidity of 50 to 60%.

Abstract:

Light-emitting diodes (LEDs) based on perovskite quantum dots (QDs) have produced external quantum efficiencies (EQEs) of more than 25% with narrowband emission1,2, but these LEDs have limited operating lifetimes. We posit that poor long-range ordering in perovskite QD films—variations in dot size, surface ligand density and dot-to-dot stacking—inhibits carrier injection, resulting in inferior operating stability because of the large bias required to produce emission in these LEDs. Here we report a chemical treatment to improve the long-range order of perovskite QD films: the diffraction intensity from the repeating QD units increases three-fold compared with that of controls. We achieve this using a synergistic dual-ligand approach: an iodide-rich agent (aniline hydroiodide) for anion exchange and a chemically reactive agent (bromotrimethylsilane) that produces a strong acid that in situ dissolves smaller QDs to regulate size and more effectively removes less conductive ligands to enable compact, uniform and defect-free films. These films exhibit high conductivity (4 × 10−4 S m−1), which is 2.5-fold higher than that of the control, and represents the highest conductivity recorded so far among perovskite QDs. The high conductivity ensures efficient charge transportation, enabling red perovskite QD-LEDs that generate a luminance of 1,000 cd m−2 at a record-low voltage of 2.8 V. The EQE at this luminance is more than 20%. Furthermore, the stability of the operating device is 100 times better than previous red perovskite LEDs at EQEs of more than 20%.