Snaith group

Abstract:

Perovskite-based photovoltaics are an emerging solar technology with lab scale device efficiencies of over 22 %, and significant steps are being made toward their commercialization. Conventionally high efficiency perovskite solar cells are formed from high boiling point, polar aprotic solvent solutions. Methylammonium lead iodide (CH3NH3PbI3) films can be made from a range of solvents and blends; however, the role the solvent system plays in determining the properties of the resulting perovskite films is poorly understood. Acetonitrile (ACN), in the presence of methylamine (MA), is a viable nontoxic solvent for fabrication of CH3NH3PbI3 photovoltaic devices with efficiencies >18 %. Herein we examine films prepared from ACN/MA and dimethylformamide (DMF) and scrutinize their physical and electronic properties using spectroscopy, scanning probe imaging, and ion scattering. Significant differences are observed in the chemistry and electronic structure of CH3NH3PbI3 films made with each solvent, ACN/MA produces films with superior properties resulting in more efficient photovoltaic devices. Here we present a holistic and complete understanding of a high performance perovskite material from an electronic, physical, and structural perspective and establish a robust toolkit with which to understand and optimize photovoltaic perovskites.

Abstract:

Cesium lead halide perovskite nanocrystals (NCs) have unique optical properties such as high color purity and high photoluminescence (PL) efficiency. However, the external quantum efficiency (EQE) of the corresponding light-emitting diodes (LEDs) is low, primarily as a result of the NC surface defects. Here, we report a method to reduce the surface defects by capping CsPbI₃ NCs with PbS. This passivation significantly enhanced the PL efficiency, reduced the Stokes shift, narrowed the PL bandwidth, and increased the stability of CsPbI₃ NCs. At the same time, CsPbI₃ NC films switched from n-type behavior to nearly ambipolar by PbS capping, which allowed us to fabricate electroluminescence LEDs using p-i-n structures. The thus-fabricated LEDs exhibited dramatically improved storage and operation stability, and an EQE of 11.8%. These results suggest that, with a suitable surface passivation strategy, the perovskite NCs are promising for next-generation LED and display applications.

Abstract:

Intrinsic and extrinsic optoelectronic properties are unraveled for formamidinium tin triiodide (FASnI3) thin films, whose background hole doping density was varied through SnF2 addition during film fabrication. Monomolecular charge-carrier recombination exhibits both a dopant-mediated part that grows linearly with hole doping density and remnant contributions that remain under tin-enriched processing conditions. At hole densities near 1020 cm-3, a strong Burstein-Moss effect increases absorption onset energies by ~300meV beyond the band gap energy of undoped FASnI3 (shown to be 1.2 eV at 5 K and 1.35 eV at room temperature). At very high doping densities (1020 cm-3), temperature-dependent measurements indicate that the effective charge-carrier mobility is suppressed through scattering with ionized dopants. Once the background hole concentration is nearer 1019 cm-3 and below, the charge-carrier mobility increases with decreasing temperature according to ~T-1.2, suggesting it is limited mostly by intrinsic interactions with lattice vibrations. For the lowest doping concentration of 7.2´1018 cm^-3, charge-carrier mobilities reach a value of 67 cm2V-1s-1at room temperature and 470 cm2V-1s-1 at 50 K. Intra-excitonic transitions observed in the THz-frequency photoconductivity spectra at 5K reveal an exciton binding energy of only 3.1 meV for FASnI3, in agreement with the low bandgap energy exhibited by this perovskite.

Abstract:

While perovskite solar cells (PSCs) have been developed with different device architectures, mesoporous devices have provided the highest power conversion efficiencies. In this work, the working mechanism of both positive-intrinsic-negative (p-i-n) and negative-intrinsic-positive (n-i-p) meso-superstructured (MSSC) PSCs, which include a thin interlayer of porous alumina at the bottom electrode, is explored. Interestingly, for both p-i-n and n-i-p architecture, the mesoporous configuration was more efficient than its planar counterpart. For MSSC SnO2-based n-i-p devices, that result was primarily due to an increase in Voc and Jsc, resulting from improved band alignment and filling of the electron trap states (n-doping at the SnO2/perovskite interface), which led to devices with 21.0% efficiency and 20.3% stabilized power output (SPO). Although MSSC NiOx-based p-i-n meso-superstructured devices were less efficient due to lower Voc, a slightly higher Jsc and fill factor improvement was achieved by the Al2O3 mesoporous layer, resulting in devices with 16.9% efficiency. Importantly, the electronic nature of the perovskite is dependent upon its physical confinement within a mesoporous scaffold. Therefore, either p- or n-type semiconductor/perovskite interfaces can be engineered by selectively modifying the semiconductor behavior with the introduction of an insulating mesoporous scaffold interlayer.