Terahertz photonics

Abstract:

A semi-classical Monte Carlo simulation of carrier dynamics in photoconductive detectors of terahertz (THz) radiation is presented. We have used this simulation to elucidate the importance of carrier trapping in the operation of photoconductive detectors. Simulations of the detection of single-cycle THz pulses by photoconductive antennas based on GaAs with trap densities between 2 × 10 17 and 2 × 10 18 cm 3 are presented. We show that the high frequency (>1 THz) spectral response of photoconductive devices decreases with increasing excitation fluence. Our simulations reveal that this effect is a direct consequence of the saturation of trapping centres © 2012 IOP Publishing Ltd.

Abstract:

We observe a strong "light-soaking" effect in SnO 2 based solid-state dye-sensitized solar cells (SDSCs). Both with and without the presence of UV light, the device's short-circuit photocurrent and efficiency increase significantly over 20-30 minutes, until steady-state is achieved. We demonstrate that this is not due to improved charge collection and investigate the charge generation dynamics employing optical-pump terahertz-probe spectroscopy. We observe a monotonic speeding-up of the generation of free-electrons in the SnO 2 conduction band as a function of the light-soaking time. This improved charge generation can be explained by a positive shift in the conduction band edge or, alternatively, an increase in the density of states (DoS) at the energy at which photoinduced electron transfer occurs. To verify this hypothesis, we perform capacitance and charge extraction measurements which indicate a shift in the surface potential of SnO 2 of up to 70 mV with light soaking. The increased availability of states into which electrons can be transferred justifies the increase in both the charge injection rate and ensuing photocurrent. The cause for the shift in surface potential is not clear, but we postulate that it is due to the photoinduced charging of the SnO 2 inducing a rearrangement of charged species or loss of surface oxygen at the dye-sensitized heterojunction. Understanding temporally evolving processes in DSCs is of critical importance for enabling this technology to operate optimally over a prolonged period of time. This work specifically highlights important changes that can occur at the dye-sensitized heterojunction, even without direct light absorption in the metal oxide. © 2012 The Royal Society of Chemistry.

Abstract:

Using transient terahertz photoconductivity measurements, we have made noncontact, room temperature measurements of the ultrafast charge carrier dynamics in InP nanowires. InP nanowires exhibited a very long photoconductivity lifetime of over 1 ns, and carrier lifetimes were remarkably insensitive to surface states despite the large nanowire surface area-to-volume ratio. An exceptionally low surface recombination velocity (170 cm/s) was recorded at room temperature. These results suggest that InP nanowires are prime candidates for optoelectronic devices, particularly photovoltaic devices, without the need for surface passivation. We found that the carrier mobility is not limited by nanowire diameter but is strongly limited by the presence of planar crystallographic defects such as stacking faults in these predominantly wurtzite nanowires. These findings show the great potential of very narrow InP nanowires for electronic devices but indicate that improvements in the crystallographic uniformity of InP nanowires will be critical for future nanowire device engineering.

Abstract:

The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 ± 120 cm(2)/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth.

Abstract:

Graphene has proved itself as being unique in terms of fundamental physics, and of particular importance for post-silicon electronics. Research into graphene has divided into two branches, one probing the remarkable electronic and optical properties of graphene, and the other pursuing technologically viable forms of the material. Terahertz time domain spectroscopy (THz TDS) is a powerful tool for both, able to characterise the free carrier response of graphene and probe the inter and intraband response of excited carriers with sub-ps time resolution. We review THz TDS and related THz measurements of graphene. © Springer Science+Business Media, LLC 2012.