Hybrid Modulation-Doping of Solution-Processed Ultrathin Layers of ZnO Using Molecular Dopants.
Advanced materials (Deerfield Beach, Fla.) 28:20 (2016) 3952-3959
Abstract:
An alternative doping approach that exploits the use of organic donor/acceptor molecules for the effective tuning of the free electron concentration in quasi-2D ZnO transistor channel layers is reported. The method relies on the deposition of molecular dopants/formulations directly onto the ultrathin ZnO channels. Through careful choice of materials combinations, electron transfer from the dopant molecule to ZnO and vice versa is demonstrated.Energy Quantization in Solution‐Processed Layers of Indium Oxide and Their Application in Resonant Tunneling Diodes
Advanced Functional Materials Wiley 26:10 (2016) 1656-1663
Hybrid Light‐Emitting Transistors Based on Low‐Temperature Solution‐Processed Metal Oxides and a Charge‐Injecting Interlayer
Advanced Optical Materials Wiley 4:2 (2016) 231-237
Quasi Two-Dimensional Dye-Sensitized In2O3 Phototransistors for Ultrahigh Responsivity and Photosensitivity Photodetector Applications.
ACS applied materials & interfaces 8:7 (2016) 4894-4902
Abstract:
We report the development of dye-sensitized thin-film phototransistors consisting of an ultrathin layer (<10 nm) of indium oxide (In2O3) the surface of which is functionalized with a self-assembled monolayer of the light absorbing organic dye D102. The resulting transistors exhibit a preferential color photoresponse centered in the wavelength region of ∼500 nm with a maximum photosensitivity of ∼10(6) and a responsivity value of up to 2 × 10(3) A/W. The high photoresponse is attributed to internal signal gain and more precisely to charge carriers generated upon photoexcitation of the D102 dye which lead to the generation of free electrons in the semiconducting layer and to the high photoresponse measured. Due to the small amount of absorption of visible photons, the hybrid In2O3/D102 bilayer channel appears transparent with an average optical transmission of >92% in the wavelength range 400-700 nm. Importantly, the phototransistors are processed from solution-phase at temperatures below 200 °C hence making the technology compatible with inexpensive and temperature sensitive flexible substrate materials such as plastic.Exploring Two-Dimensional Transport Phenomena in Metal Oxide Heterointerfaces for Next-Generation, High-Performance, Thin-Film Transistor Technologies.
Small (Weinheim an der Bergstrasse, Germany) 11:41 (2015) 5472-5482