Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution.
Science advances 3:3 (2017) e1602640
Abstract:
Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In2O3/ZnO heterojunction. We find that In2O3/ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In2O3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In2O3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.Sub-second photonic processing of solution-deposited single layer and heterojunction metal oxide thin-film transistors using a high-power xenon flash lamp
Journal of Materials Chemistry C Royal Society of Chemistry (RSC) 5:45 (2017) 11724-11732
Doping of Large Ionization Potential Indenopyrazine Polymers via Lewis Acid Complexation with Tris(pentafluorophenyl)borane: A Simple Method for Improving the Performance of Organic Thin-Film Transistors
Chemistry of Materials American Chemical Society (ACS) 28:21 (2016) 8016-8024
Nondestructive Method for Mapping Metal Contact Diffusion in In2O3 Thin-Film Transistors.
ACS applied materials & interfaces 8:38 (2016) 25631-25636
Abstract:
The channel width-to-length ratio is an important transistor parameter for integrated circuit design. Contact diffusion into the channel during fabrication or operation alters the channel width and this important parameter. A novel methodology combining atomic force microscopy and scanning Kelvin probe microscopy (SKPM) with self-consistent modeling is developed for the nondestructive detection of contact diffusion on active devices. Scans of the surface potential are modeled using physically based Technology Computer Aided Design (TCAD) simulations when the transistor terminals are grounded and under biased conditions. The simulations also incorporate the tip geometry to investigate its effect on the measurements due to electrostatic tip-sample interactions. The method is particularly useful for semiconductor- and metal-semiconductor interfaces where the potential contrast resulting from dopant diffusion is below that usually detectable with scanning probe microscopy.Al‐Doped ZnO Transistors Processed from Solution at 120 °C
Advanced Electronic Materials Wiley 2:6 (2016)