Optical properties and limiting photocurrent of thin-film perovskite solar cells

Energy and Environmental Science Royal Society of Chemistry 8:2 (2014) 602-609

Authors:

James M Ball, Samuel D Stranks, Maximilian T Hörantner, Sven Hüttner, Wei Zhang, Edward JW Crossland, Ivan Ramirez, Moritz Riede, Michael B Johnston, Richard H Friend, Henry J Snaith

Abstract:

Metal-halide perovskite light-absorbers have risen to the forefront of photovoltaics research offering the potential to combine low-cost fabrication with high power-conversion efficiency. Much of the development has been driven by empirical optimisation strategies to fully exploit the favourable electronic properties of the absorber layer. To build on this progress, a full understanding of the device operation requires a thorough optical analysis of the device stack, providing a platform for maximising the power conversion efficiency through a precise determination of parasitic losses caused by coherence and absorption in the non-photoactive layers. Here we use an optical model based on the transfer-matrix formalism for analysis of perovskite-based planar heterojunction solar cells using experimentally determined complex refractive index data. We compare the modelled properties to experimentally determined data, and obtain good agreement, revealing that the internal quantum efficiency in the solar cells approaches 100%. The modelled and experimental dependence of the photocurrent on incidence angle exhibits only a weak variation, with very low reflectivity losses at all angles, highlighting the potential for useful power generation over a full daylight cycle.

Measurement of doping concentration, internal quantum efficiency and non-radiative lifetime of InP nanowires

Institute of Electrical and Electronics Engineers (IEEE) (2014) 272-274

Authors:

Fan Wang, Qian Gao, Kun Peng, Yanan Guo, Zhe Li, Lan Fu, Leigh Morris Smith, Hark Hoe Tan, Chennupati Jagadish

Selective Area Epitaxial Growth of InP Nanowire Array for Solar Cell Applications

Institute of Electrical and Electronics Engineers (IEEE) (2014) 252-253

Authors:

Q Gao, L Fu, F Wang, Y Guo, ZY Li, K Peng, Li Li, Z Li, Y Wenas, S Mokkapati, HH Tan, C Jagadish

Single GaAs/AlGaAs Nanowire Photoconductive Terahertz Detectors

Institute of Electrical and Electronics Engineers (IEEE) (2014) 221-222

Authors:

Kun Peng, Patrick Parkinson, Lan Fu, Qiang Gao, Nian Jiang, Ya-Nan Guo, Fan Wang, Hannah J Joyce, Jessica L Boland, Michael B Johnston, Hark Hoe Tan, Chennupati Jagadish

Ultrafast transient terahertz conductivity of monolayer MoS₂ and WSe₂ grown by chemical vapor deposition

ACS nano American Chemical Society 8:11 (2014) 11147-11153

Authors:

Callum J Docherty, Patrick Parkinson, Hannah Joyce, Ming-Hui Chiu, Chang-Hsiao Chen, Ming-Yang Lee, Lain-Jong Li, Laura Herz, Michael Johnston

Abstract:

We have measured ultrafast charge carrier dynamics in monolayers and trilayers of the transition metal dichalcogenides MoS2 and WSe2 using a combination of time-resolved photoluminescence and terahertz spectroscopy. We recorded a photoconductivity and photoluminescence response time of just 350 fs from CVD-grown monolayer MoS2, and 1 ps from trilayer MoS2 and monolayer WSe2. Our results indicate the potential of these materials as high-speed optoelectronic materials.