Terahertz photonics

Abstract:

We demonstrate ultrafast modulation of terahertz radiation by unaligned optically pumped single-walled carbon nanotubes. Photoexcitation by an ultrafast optical pump pulse induces transient terahertz absorption in nanowires aligned parallel to the optical pump. By controlling the polarisation of the optical pump, we show that terahertz polarisation and modulation can be tuned, allowing sub-picosecond modulation of terahertz radiation. Such speeds suggest potential for semiconductor nanowire devices in terahertz communication technologies.

Abstract:

Optical-pump-terahertz-probe spectroscopy is a technique that can measure directly the conductivity of photoexcited carriers on a picosecond timescale. In this chapter, we introduce the technique and data analysis, and discuss suitable models of the interaction between terahertz radiation and quasiparticles in materials. We then review some recent studies of inorganic and organic semiconductors and nanomaterials. © Springer-Verlag Berlin Heidelberg 2013.

Abstract:

We studied charge transport in anodized TiO2 nanotubes in the context of their application in dye-sensitized solar cells. Optical-pump-THz- probe spectroscopy revealed short free carrier lifetimes of about 15-30 ps, which we attribute to shallow trapping. © 2013 IEEE.

Abstract:

Accurately measuring the electronic properties of nanowires is a crucial step in the development of novel semiconductor nanowire-based devices. With this in mind, optical pump-terahertz probe (OPTP) spectroscopy is ideally suited to studies of nanowires: it provides non-contact measurement of carrier transport and dynamics at room temperature. OPTP spectroscopy has been used to assess key electrical properties, including carrier lifetime and carrier mobility, of GaAs, InAs and InP nanowires. The measurements revealed that InAs nanowires exhibited the highest mobilities and InP nanowires exhibited the lowest surface recombination velocity. © 2013 Copyright SPIE.

Abstract:

Optical pump-terahertz probe spectroscopy was used to study the key electronic properties of GaAs, InAs and InP nanowires at room temperature. Of all nanowires studied, InAs nanowires exhibited the highest mobilities of 6000 cm2V-1s-1. InP nanowires featured the longest photoconductivity lifetimes and an exceptionally low surface recombination velocity of 170 cm/s. © 2013 IEEE.